Lam Research Corporation

Lam Research Corportation

Mitchell Brooks

Yoshie Kimura

Ganesh Upadhyaya

Xiang Zhou

Chen Xu

Duming Zhang

Radhika C Mani

Naveed Ansari

Kazi Sultana

Haseeb Kazi

Si-Yi Yi Li

Methods and apparatuses for critical dimension (CD) control of substrate features using integrated atomic layer deposition (ALD) and etch processes are described herein. Methods include etching to form a mask pattern of features on a substrate having a width that is less than a desired width of structures to be subsequently formed by the mask pattern of features, conformally depositing a passivation layer by ALD that increases the width of the mask pattern of features to the desired width, and etching a layer of the substrate to a desired depth to form the plurality of structures having the desired width.

Atomic layer deposition and etch in a single plasma chamber for critical dimension control

Methods and apparatuses for reducing roughness using integrated atomic layer deposition (ALD) and etch processes are described herein. In some implementations, after a mask is provided on a substrate, methods include depositing a conformal layer on the mask by ALD to reduce roughness and etching a layer underlying the mask to form patterned features having a reduced roughness. In some implementations, after a substrate is etched to a first depth to form features at the first depth in the substrate, methods include depositing a conformal layer by ALD on sidewalls of the features to protect sidewalls and reduce roughness during a subsequent etch process. The ALD and etch processes may be performed in a plasma chamber.

Atomic layer deposition and etch for reducing roughness

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Aptos, CA, United States of America

Mitchell Brooks