Hitachi, Ltd.

Oclaro Japan, Inc.

Lumentum Japan, Inc.

Misuzu Sagawa

Keiji Watanabe

Koichiro Adachi

Takanori Suzuki

Masahiro Aoki

Kazuhisa Uomi

Daisuke Ryuzaki

Tetsufumi Kawamura

Hideo Arimoto

Hiroyasu Sasaki

Toshiyuki Mine

Hiroyasu Shichi

Kazuki Watanabe

Nobuyuki Sugii

Kimio Tatsuno

Toshiki Sugawara

Shuntaro Machida

Masahiro Ojima

Atsushi Isobe

Tomonobu Tsuchiya

Kazunori Shinoda

Hiroaki Inoue

Atsushi Takai

Katsuya Oda

Tomoyoshi Mishima

Kazuhiko Hosomi

Kenji Uchida

Shinichi Nakatsuka

Satoru Kikuchi

Kazuki Tani

Makoto Kudo

Takuma Tanimoto

Takashi Toyonaka

Yae Okuno

Kiyohisa Hiramoto

An optical device includes a first substrate, having first and second surfaces, and a second substrate having a third surface. The first substrate includes: a laser unit, having an active layer and emitting light into the first substrate from the active layer; a reflecting mirror, having a plane obliquely intersecting an optical axis of light emitted from the laser unit, and being formed on the first surface so as to reflect the light toward the second surface; and a convex lens, being formed in a region on the second surface, the region including an optical axis of the light reflected by the reflecting mirror. The second substrate is provided with a grating coupler and an optical waveguide on the third surface, the optical waveguide having light incident on the grating coupler propagating therethrough.

Optical device having a substrate and a laser unit that emits light into the substrate

The invention is to reduce non-uniformity of a processing shape over a wide range of a single field-of-view. The invention is directed to a method of processing micro electro mechanical systems with a first step and a second step in a processing apparatus including an irradiation unit that irradiates a sample with a charged particle beam, a shape measuring unit that measures a shape of the sample, and a control unit. In the first step, the irradiation unit irradiates a plurality of single field-of-view points with the charged particle beam in a first region of the sample, the shape measuring unit measures the shape of a spot hole formed in the first region of the sample, and the control unit sets, based on measurement results of the shape of the spot hole, a scan condition of the charged particle beam or a forming mask of the charged particle beam at each of the single field-of-view points. In the second step, the irradiation unit irradiates, based on the scan condition or the forming mask set in the first step, a second region of the sample with the charged particle beam.

Micro-electro-mechanical-systems processing method, and micro-electro-mechanical-systems processing apparatus

In a calculator in a MEMS manufacturing system, a stage control unit inclines a stage based on a stage anglesetting a stage inclination angle and a stage angleof the inclination angle different from the stage angle. A stage-angle calculation unit calculates the stage inclination angles from first and second images acquired by a SEM apparatus when the stage control unit sets the stage at the stage anglesand. A 3D-data creation unit creates three-dimensional device data from a third image that is a device image acquired when the stage is set at the stage angleand a fourth image that is a device image acquired when the stage is set at the stage angle. When the three-dimensional device data is created, a correction value calculated from the stage anglesandand the first and second images is used.

MEMS manufacturing system and MEMS manufacturing method

The invention is directed to a technique for reducing the time from the start of fabrication of a prototype structure to the completion of fabrication of a real structure. A device processing method includes steps of: fabricating a first structure using an ion beam under a first condition in a first region on a substrate; measuring a size of the first structure which is fabricated; comparing the measurement result with design data; determining a second condition from the comparison result; and fabricating a second structure using the ion beam under the second condition in a second region on the substrate.

Device processing method and device processing apparatus

The device manufacturing method includes a length measuring step (S) of, on the basis of an observation target image of an SEM image taken from a direction having a predetermined angle from a direction perpendicular to a plane of a substrate, measuring the thickness of a target object, or the depth of etching, formed on the substrate. In addition, in the length measuring step, an etching angle made by a cross section of the etching and the direction perpendicular to the plane of the substrate is calculated from processing data of the target object, and the thickness of the target object or the depth of the etching is measured on the basis of the calculated etching angle.

Device manufacturing method and device manufacturing apparatus

The light emitting device includes an active layer formed on a semiconductor substrate for emitting light, a semiconductor layer of a first conductivity type electrically connected to one end of the active layer, a semiconductor layer of a second conductivity type electrically connected to the other end of the active layer, first and second electrodes, a feedback mechanism for laser oscillation, and a waveguide for guiding the light emitted from the active layer, in which the active layer is made of a semiconductor having an affinity with a silicon CMOS process, and the semiconductor layer of the first conductivity type and the semiconductor layer of the second conductivity type, and the waveguide are each made of silicon as a part of the semiconductor substrate.

Light emitting device, manufacturing method thereof, and optical transceiver

An optical element mounting substrate where a plurality of light emitting elements have been mounted on the same plane, a lens array for collimating a plurality of light emitted from the plurality of light emitting elements, and a wavelength multiplexing/demultiplexing device are prepared. The wavelength multiplexing/demultiplexing device has typically mounted both a wavelength selecting filter and a mirror on front and rear planes of a transparent substrate. These three components are mounted within a package at a desirable angle position. Optical axes of respective wavelengths of the wavelength multiplexing/demultiplexing device are determined based upon a thickness and an angle of the light emitting element mounting substrate, and are arrayed on a straight line of a horizontal plane. As a consequence, if the respective light emitting elements are arranged on the optical axes which are exclusively determined by a design work, then optical multiplexing/demultiplexing operations can be carried out.

Optical transmitter/receiver module

A semiconductor laser which does not cause a sudden failure due to an electric surge. A ridge that is formed by a GaAs buffer layer, an n-InGaP cladding layer which is lattice-matched to a GaAs substrate, a strained-quantum well active layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, a p-GaAs waveguide layer, a p-InGaP cladding layer which is lattice-matched to the GaAs substrate, and a p-GaAs cap layer is constructed on the n-GaAs substrate by being buried therein by an n-InGaP current-blocking layer. A device stripe is constructed by a current-injected region in the device and current-non-injected regions near facets.

Semiconductor laser devices

The semiconductor device has a semiconductor structure directly bonded onto another semiconductor structure of a different kind from the former. These two semiconductor structures are arranged in such a way that their crystal structures in a cross section perpendicular to the bonded interface of the two semiconductor structures are different from each other or that their lattice orders are not equivalent. This can be applied to direct bonding of any combination of semiconductor structures in any crystallographic orientation relation. This also allows bonding of three or more kinds of semiconductor structures.

Semiconductor device having first and second semiconductor structures

A semiconductor laser device is provided which is designed to prevent end surface optical damage, thereby permitting an increase in the output of the semiconductor laser. To achieve this, an active layer at the light emitting end surface portion of the semiconductor laser device is recessed inwardly by a distance between 50 nm and 300 nm (depending on the amount of etching) from the end surfaces of the crystal layers lying on both sides of the active layer. The recess serves to improve the heat dissipation of the active layer portion. This results in improving the amount of light output of the semiconductor laser which is possible without causing optical damage. A method for making the device is also provided. This method permits achieving the above-noted advantages simply by adding an etching step to the conventional semiconductor laser fabrication process, without requiring special equipment or technique.

Semiconductor laser device and a method for the manufacture thereof

A semiconductor crystalline laminate structure wherein between a first semiconductor layer consisting of a first alloyed semiconductor and a second semiconductor layer which has an energy gap wider than that of the first alloyed semiconductor and a lattice constant smaller than that of the first alloyed semiconductor and consists of one semiconductor selected from a group of single-element semiconductor, compound semiconductor, and alloyed semiconductor which contain no semiconductor having a largest lattice constant among the semiconductor constituting the first alloyed semiconductor, a third semiconductor layer which consists of a second alloyed semiconductor having an energy gap wider than that of the first alloyed semiconductor and contains the semiconductor having a largest lattice constant among the semiconductors constituting the first alloyed semiconductor is formed in contact with these layers, a forming method for the semiconductor crystalline laminate structure, and a semiconductor device using the method are indicated.

Semiconductor crystalline laminate structure, forming method of the

A surface emitting semiconductor laser of a laminated structure having at least a light emitting active layer sandwiched between a dielectric film multi-layer mirror and a p-type semiconductor multi-layer mirror on a semiconductor substrate. The energy .DELTA.Ec of conduction band discontinuity is higher than the energy .DELTA.Ev of valence band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the p-type semiconductor multi-layer mirror. On the other hand, the energy .DELTA.Ev of valence band discontinuity is higher than the energy .DELTA.Ec of conduction band discontinuity between at least two kinds of semiconductor layers with different refractive indices constituting the n-type semiconductor multi-layer mirror.

Surface emitting semiconductor laser

A semiconductor laser device comprises a semiconductor laser which oscillates a fundamental wave, and a transparent waveguide which is installed substantially in parallel to a direction of a cavity of the semiconductor laser and integral with the semiconductor laser, where second harmonics of the fundamental wave travel through the transparent waveguide and are emitted therefrom. The semiconductor laser and the transparent waveguide have a refractive index in a prescribed range respectively, and an output of second harmonics being significantly high in comparison to the prior art can be obtained.

Growing community of inventors

Tokyo, Japan

Misuzu Sagawa