Sony Corporation

Misuzu Abe

Hiroshi Nakajima

Hiroshi Yoshida

Takashi Yamaguchi

Maho Ohara

Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlGaN (0&#x2266;x&#x2266;1.0). In this device, the component ratio 'x' of Al is specified at a value in a range of 0.3&#x2266;x&#x2266;1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio 'x' of Al is specified at a value in a range of 0.15&#x3c;x&#x3c;0.30, so that the semiconductor laser light emitting device is configured as a weak index type pulsation semiconductor laser light emitting device; or the component ratio &#x201c;x&#x201d; of Al is specified at a value in a range of 0&#x2266;x&#x2266;0.15, so that the semiconductor laser light emitting device is configured as a gain guide type laser light emitting device.

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Kanagawa, Japan

Misuzu Abe