Semiconductor Components Industries, LLC

Misbahul Azam

Gary Horst Loechelt

Jeffrey Pearse

Julio C Costa

James P Morgan

Peter J Zdebel

Christopher J Gass

Daniel G Hannoun

An integrated circuit ( ) includes high performance complementary bipolar NPN and PNP vertical transistors ( ). The NPN transistor is formed on a semiconductor substrate whose surface ( ) is doped to form a PNP base region ( ). A film ( ) is formed on the surface with an opening ( ) over an edge of the base region. A first conductive spacer ( ) is formed along a first sidewall ( ) of the opening to define a PNP emitter region ( ) within the base region. A second conductive spacer ( ) is formed along a second sidewall ( ) of the opening to define a PNP collector region ( ).

Integrated circuit with a high speed narrow base width vertical PNP transistor

A transistor ( ) is formed with a low resistance trench structure that is utilized for a gate ( ) of the transistor. The low resistance trench structure facilitates forming a shallow source region ( ) that reduces the gate-to-source capacitance.

Method of forming a low resistance semiconductor device and structure therefor

A masking material ( ) is formed on a foundation layer ( ) and a substrate ( ). A mask ( ) is disposed onto the masking material ( ) where a trench ( ) is desired to be formed. An etch step removes all of the masking material ( ) except at regions where the mask ( ) was formed leaving a protruding portion ( ) with an opening ( ) on either side. An epi layer ( ), is grown on the foundation layer ( ) adjacent to the protruding portion ( ) in the opening ( ). A wet oxide etch process is used to remove the protruding portion ( ) leaving a trench ( ) formed in the epi layer ( ). To complete the process, a silicon wet etch process is used to round off the corners at an edge ( ) of the trench ( ).

Trench growth techniques using selective epitaxy

A semiconductor component ( ) includes a semiconductor substrate ( ) that is formed with trench ( ). A semiconductor layer ( ) is formed in the trench for coupling a control signal (V ) through a sidewall ( ) of the trench to route a current (I ) through a bottom surface ( ) of the trench.

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Gilbert, AZ, United States of America

Misbahul Azam