Mitsubishi Denki Kabushiki Kaisha

Mitsubishi Electric Corporation

Misao Hironaka

Kyosuke Kuramoto

Harumi Nishiguchi

Masatsugu Kusunoki

Ryo Hattori

Tetsuya Yagi

Yosuke Suzuki

Yousuke Yamamoto

A semiconductor device includes a submount; a semiconductor laser mounted on the submount via solder in a junction-down manner. The semiconductor laser includes a semiconductor substrate, a semiconductor laminated structure containing a p-n junction, on the semiconductor substrate, and an electrode on the semiconductor laminated structure and joined to the submount via the solder. A high-melting-point metal or dielectric film is located between the submount and the semiconductor laminated structure and surrounds the electrode.

Semiconductor device

A method for manufacturing a semiconductor device includes forming a semiconductor laminated structure on a substrate as a wafer including semiconductor laser structures; forming a first groove between the semiconductor laser structures on a major surface of the wafer; separating the wafer to laser bars including at least two of the semiconductor laser structures arrayed in a bar shape, after forming the first groove; forming a second groove in the first groove of the laser bars, the second groove having a width no wider than the first groove; and separating one of the laser bars into respective semiconductor lasers along the second groove.

Method for manufacturing semiconductor device

A method of fabricating a semiconductor light emitting device includes forming an SiON film thinner than 50 nm on a stripe region on a surface of a first semiconductor layer at a first temperature, etching the first semiconductor layer using the SiON film as a mask and forming an optical waveguide including the first semiconductor layer which is left below the SiON film, and selectively growing a second semiconductor layer as a current blocking layer where the first semiconductor layer was removed by etching, using the SiON film as a mask at a second temperature. Therefore, adhesion of the material of the current blocking layer to the surface of the selective growth mask is suppressed, and imperfect growth of the contact layer and imperfect contact of the electrode directly formed on the upper surface of the wave-guide are suppressed, respectively. In addition, the generation of dark lines due to stress between the selective growth mask and the semiconductor layer constituting the upper part of the wave-guide is suppressed, and reduction in light output power is prevented.

Semiconductor light emitting device

A semiconductor laser device includes a semiconductor laser chip; a heat sink; a solder layer adhering the semiconductor laser chip to the heat sink; a lower electrode on the semiconductor laser chip including a non-alloying layer not alloyed with the solder layer and opposite the heat sink and directly opposite to a center line in a longitudinal direction of a light emitting region of the semiconductor laser chip and alloying layers on regions of the lower electrode, except for the region of the non-alloying layer, alloyed with the solder layer. Internal stress due to the difference in coefficients of thermal expansion of the semiconductor laser chip and the heat sink and applied to the light emitting region is reduced, and GaAs destruction at the light emitting region is prevented.

Semiconductor laser device

A semiconductor laser device includes resonator facets formed by cleaving; a first conductivity type semiconductor region; a semiconductor multilayer structure disposed on the first conductivity type semiconductor region and including at least an active layer and upper and lower cladding layers sandwiching the active layer, the semiconductor multilayer structure functioning as a laser; first and second electrodes for supplying current to the semiconductor multilayer structure to generate light in that structure; a second conductivity type semiconductor region disposed in the vicinity of the semiconductor multilayer structure so that the light generated in the semiconductor multilayer structure is directly applied to the second conductivity type region, the second conductivity type region contacting the first conductivity type semiconductor region to produce a pn junction; and a third electrode electrically contacting the second conductivity type region for outputting signals when a voltage is applied across the third electrode and one of the first and second electrodes. Since the light-responsive region, i.e., the pn junction, is included in the laser device, an external photodetector is dispensed with, so the cost of the laser device is significantly reduced.

A semiconductor photodetector device includes a second conductivity type region extending through a first conductivity type window layer to a first conductivity type light absorbing layer and a short carrier lifetime region surrounding ht second conductivity type region such that the lifetime of minority carriers generated in the light absorbing layer outside a depletion layer located around the second conductivity type region is significantly shorter than the lifetime of minority carriers elsewhere within the light absorbing layer. The photodetector device can respond quickly to variations in incident light because the collection of charge carriers generated in the light absorbing layer outside the depletion layer is reduced.

Semiconductor photodetector device with short lifetime region

A semiconductor device is made by etching a III-V compound semiconductor layer having a (100) surface using a mask having an opening defined by edges including at least one edge along an [011] direction of the layer so that the surface revealed by etching has a (111) orientation. An electrode is formed on the (111) surface by vacuum vapor deposition.

Semiconductor device including an oblique surface and an electrode

A semiconductor light emission system, comprising a semiconductor laser part constituted of a second conductive current restricting layer with a striped groove perforated therein, a first conductive clad layer, a first or second conductive active layer, a second conductive clad layer on a first conductive substrate, and a second conductive - first conductive - second conductive bipolar transistor part constituted of said second conductive current restricting layer, first conductive clad layer, first or second conductive active layer, second conductive active layer in a position other than the semiconductor laser part.

Semiconductor light emission system

A photodetector device includes a stack of a light-absorbing layer, a window layer on a substrate, and a region in the window layer formed by reversing the conductivity type of the window layer extending to the light-absorbing layer. A surface protecting film is disposed on the window layer, with a light receiving area being left uncovered. An electrode makes ohmic contact with the reversed conductivity region and surrounds the light receiving area. A metallic light-blocking film is disposed on the protecting film with an insulating gap therebetween. The inner edge of the light-absorbing film is located in alignment with or inward of the p-n junction between the reversed conductivity type region and the window layer.

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Tokyo, Japan

Misao Hironaka