Semiconductor Energy Laboratory Co., Ltd.

Sharp Kabushiki Kaisha Corporation

Other

Misako Nakazawa

Naoki Makita

Hisashi Ohtani

Satoshi Murakami

Toshiji Hamatani

Hideto Ohnuma

Masayuki Sakakura

Hisao Ikeda

Masahiro Takahashi

Toshimitsu Konuma

Takeshi Nishi

Hiroki Ohara

Kenji Kasahara

Kaoru Tsuchiya

Noriko Miyagi

Takuya Matsuo

Ritsuko Nagao

Noriyuki Matsuda

Ayumi Ishigaki

Masayuki Higuchi

Shunpei Yamazaki

Jun Koyama

Mitsuhiro Ichijo

Akira Sugawara

Etsuko Fujimoto

Yukiko Uehara

A semiconductor device and a process for producing the same, the semiconductor device comprising two conductive layers provided as separate layers, and an insulating layer sandwiched by the two conductive layers, in which the two conductive layers are electrically connected to each other with an embedded conductive layer or an oxide conductive layer provided as filling an opening formed in the insulating layer, and the embedded conductive layer comprises an organic resin film containing a conductive material dispersed therein or an inorganic film containing a conductive material dispersed therein.

Method for producing a semiconductor device by etch back process

A spin addition method for catalyst elements is simple and very important technique, because the minimum amount of a catalyst element necessary for crystallization can be easily added by controlling the catalyst element concentration within a catalyst element solution, but there is a problem in that uniformity in the amount of added catalyst element within a substrate is poor. The non-uniformity in the amount of added catalyst element within the substrate is thought to influence fluctuation in crystallinity of a crystalline semiconductor film that has undergone thermal crystallization, and exert a bad influence on the electrical characteristics of TFTs finally structured by the crystalline semiconductor film. The present invention solves this problem with the aforementioned conventional technique. If the spin rotational acceleration speed is set low during a period moving from a dripping of the catalyst element solution process to a high velocity spin drying process in a catalyst element spin addition step, then it becomes clear that the non-uniformity of the amount of added catalyst element within the substrate is improved. The above stated problems are therefore solved by applying a spin addition process with a low spin rotational acceleration to a method of manufacturing a crystalline semiconductor film.

Crystalline semiconductor film, method of manufacturing the same, and semiconductor device

A catalytic element is added to an amorphous semiconductor film and heat treatment is conducted therefor to produce a crystalline semiconductor film with good quality, a TFT (semiconductor device) with a satisfactory characteristic is realized using the crystalline semiconductor film. A semiconductor layer includes a region containing an impurity element which has a concentration of 1&#xd7;10/cmto 1&#xd7;10/cmand belongs to group 15 of the periodic table and an impurity element which has a concentration of 1.5&#xd7;10/cmto 3&#xd7;10/cmand belongs to group 13 of the periodic table, and the region is a region to which a catalytic element left in the semiconductor film (particularly, the channel forming region) moves.

Semiconductor device and manufacturing method thereof

Problems in prior art regarding an n-channel TFT in the source/drain gettering method are solved. In the n-channel TFT, its source/drain regions contain only an n-type impurity. Therefore, compared to a p-channel TFT whose source/drain regions contain an n-type impurity and a higher concentration of p-type impurity, the gettering efficiency is inferior in a channel region of the n-channel transistor. Accordingly, the problem of inferior gettering efficiency in the n-channel TFT can be solved by providing at an end of its source/drain regions a highly efficient gettering region that contains an n-type impurity and a p-type impurity both with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

Semiconductor device and method of manufacturing the same

A crystalline semiconductor film in which the locations and sizes of crystal grains have been controlled, is prepared, and a TFT capable of high speed operation is realized by employing the crystalline semiconductor film as the channel forming region of the TFT. An organic resin film (in FIG.) having a predetermined shape is provided on a substrate (), whereupon an inorganic insulating film () and an amorphous semiconductor film are formed. Subsequently, the amorphous semiconductor film is crystallized by laser annealing. The material and thickness of the organic resin film () in the predetermined shape or those of the inorganic insulating film () are properly regulated, whereby the cooling rate of the semiconductor film is lowered to form a first region () in which crystal grain diameters are large.

Semiconductor device, and method of fabricating the same

An AMLCD having high fineness and high contrast is realized. First, an interlayer film is provided on an element electrode, and an opening portion is formed in the interlayer film. Next, after a first metal layer is formed, an embedded insulating layer is formed. The embedded insulating layer is retreated by a means, such as an etch back method, to realize a state in which only the opening portion is filled with the embedded insulating layer. By this, electric connection between the element electrode and a second metal layer becomes possible while keeping the flatness.

Electrooptical device, method of manufacturing the same, and electronic equipment

Method of manufacturing a semiconductor device that includes gettering regions

A light emitting element has been fabricated by making a barrier having a curved surface having a radius of curvature at the upper portion or lower portion, washing a surface of an anode with a porous sponge in order to remove minute grains dotted on the surface of the anode, and performing the vacuum heating in order to remove absorbed water of a whole of a substrate on which a TFT and the barrier have been provided immediately before a layer containing an organic compound is formed.

Method of fabricating a light emitting device including a step for cleaning the surface of an anode layer during manufacture

Semiconductor device

Semiconductor device and process for producing the same

Method of fabricating light emitting device

In order to solve the problem of inferior gettering efficiency in the n-channel TFT, the present invention provides at an end of the source/drain regions of the n-channel TFT a highly efficient gettering region that contains both of an n-type impurity and a p-type impurity with the concentration of the p-type impurity set higher than the concentration of the n-type impurity.

Semiconductor device having an efficient gettering region

The invention is directed to a countermeasure against a local amorphous region observed as an eddy pattern on a thermally crystallized crystalline silicon film. The local amorphous region is thought to result from a deficiently formed ultra-thin silicon oxide film by ozone water treatment, which causes a local phenomenon of repelling a catalyst element solution during spin coating. This inhibits a uniform addition of a catalyst element. A relationship between an ozone concentration of ozone water and a wait time between the ozone water treatment and the subsequent step of adding the catalyst element is deduced and used for planning the countermeasure against the local amorphous region.

Method for forming crystalline semiconductor film and apparatus for forming the same

Growing community of inventors

Kanagawa, Japan

Misako Nakazawa