Fuji Electric Co., Ltd.

Fuji Electric., Ltd.

Misaki Takahashi

Yuichi Onozawa

Yuichi Harada

Takahiro Tamura

Kaname Mitsuzuka

Kouta Yokoyama

Tohru Shirakawa

Takashi Yoshimura

Hiroshi Takishita

Soichi Yoshida

Toru Ajiki

Yoshiharu Kato

Akinori Kanetake

Tatsuya Naito

Hiroki Wakimoto

Akio Yamano

Daisuke Ozaki

Kota Ohi

Eri Ogawa

Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.

Semiconductor device

A device includes a substrate with upper/lower surfaces, including hydrogen containing region having hydrogen chemical concentration peaks in a depth direction. A carrier concentration distribution of the hydrogen containing region includes a first carrier concentration peak, a second carrier concentration peak closest to the first carrier concentration peak, a third carrier concentration peak arranged closer to the upper surface than the second carrier concentration peak, a first inter peak region arranged between the first and second carrier concentration peaks, a second inter peak region arranged between the second and third carrier concentration peaks, and an inter-peaks concentration peak arranged in the second inter peak region such that the concentration peak does not overlap the hydrogen chemical concentration peaks in the second and third carrier concentration peaks. A local minimum value of a carrier concentration in the first inter peak region is smaller than that of the second inter peak region.

Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen. The semiconductor substrate includes an N type drift region, an N type emitter region that has a higher carrier concentration than that in the drift region, a P type base region, a P type collector region provided to be in contact with a lower surface of the semiconductor substrate, and an N type buffer region that is provided between the collector region and the drift region, and has a higher carrier concentration than that in the drift region, and the hydrogen containing region is included in the buffer region.

Semiconductor device and manufacturing method

A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.

To provide a semiconductor device having excellent conduction characteristics of a transistor portion and a diode portion. The semiconductor device having a transistor portion and a diode portion, the semiconductor device includes: a drift region of a first conductivity type provided on a semiconductor substrate, a first well region of a second conductivity type provided on an upper surface side of the semiconductor substrate, an anode region of the second conductivity provided on the upper surface side of the semiconductor substrate, in the diode portion, and a first high concentration region of a second conductivity type which is provided in contact with a first well region between the anode region and the first well region, and has a higher doping concentration than the anode region.

Reverse-conducting IGBT and manufacturing method thereof

A semiconductor device is provided, including a semiconductor substrate, wherein the semiconductor substrate has: a diode region; a transistor region; and a boundary region that is positioned between the diode region and the transistor region, the boundary region includes a defect region that is provided: at a predetermined depth position on a front surface-side of the semiconductor substrate; and to extend from an end portion of the boundary region adjacent to the diode region toward the transistor region, at least part of the boundary region does not include a first conductivity-type emitter region exposed on a front surface of the semiconductor substrate, and the transistor region does not have the defect region below a mesa portion that is sandwiched by two adjacent trench portions, and closest to the boundary region among the mesa portions having the emitter region.

Provided is a semiconductor device that includes: a first conductivity type anode region provided in the semiconductor substrate in the diode region; a second conductivity type drift region that is located below the anode region in the semiconductor substrate; a second conductivity type accumulation region that is located between the anode region and the drift region in a depth direction of the semiconductor substrate; and an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate; wherein the plurality of contact portions include a first contact portion provided in the diode region; and the first contact portion includes a first non-overlapping region in which an end of the first contact portion and the accumulation region in the first direction do not overlap in the depth direction.

A semiconductor device including a semiconductor substrate and a plurality of trench structures formed on the semiconductor substrate. The semiconductor substrate includes a first element region for forming an insulated gate bipolar transistor therein, and a second element region for forming a diode therein, the semiconductor substrate constituting a drift layer. The plurality of trench structures includes a plurality of gate trench structures provided on a front surface side of the first element region, each gate trench structure having an electrode provided therein that is based on a gate potential, and a plurality of floating trench structures provided on a front surface side of the second element region, each floating trench structure having an electrode provided therein that has a floating potential.

Insulated-gate bipolar transistor (IGBT) or diode including buffer region and lifetime killer region

Provided is a semiconductor device including transistor regions and diode regions each extending from a given one edge of an active region to a different edge of the active region, a first-conductivity-type pad well region in contact with a gate runner region shaped like a rectangular ring and provided within the gate runner region, and first-conductivity-type collector regions provided in the transistor regions in a one-to-one correspondence and second-conductivity-type cathode regions provided in the diode regions in a one-to-one correspondence. Here, an edge of the pad well region at which the pad well region ends in an arranging direction extends in an extending direction, and the arranging direction is orthogonal to the extending direction in which the transistor regions and the diode regions extend, and any one or more of the collector regions are positioned below the edge of the pad well region.

Provided is a semiconductor device comprising: a semiconductor substrate; a plurality of first trench portions formed at a front surface side of the semiconductor substrate and extending in a predetermined extending direction in a planar view; an emitter region of a first conductivity type formed between adjacent trenches of the plurality of first trench portions at the front surface side of the semiconductor substrate; a first contact region of a second conductivity type formed between the adjacent trenches of the plurality of first trench portions, the first contact region and the emitter region being arranged alternately in the extending direction; and a second contact region of a second conductivity type formed above the first contact region to be apart from the emitter region and having a higher doping concentration than the first contact region.

To improve withstand capability of a semiconductor device during reverse recovery, provided is a semiconductor device including a semiconductor substrate having a first conduction type; a first region having a second conduction type that is formed in a front surface of the semiconductor substrate; a second region having a second conduction type that is formed adjacent to the first region in the front surface of the semiconductor substrate and has a higher concentration than the first region; a third region having a second conduction type that is formed adjacent to the second region in the front surface of the semiconductor substrate and has a higher concentration than the second region; an insulating film that covers a portion of the second region and the third region; and an electrode connected to the second region and the first region that are not covered by the insulating film.

Growing community of inventors

Matsumoto, Japan

Misaki Takahashi