Fuji Electric Co., Ltd.

Misaki Meguro

Takashi Yoshimura

Hiroshi Takishita

Naoko Kodama

Yasunori Agata

Yuichi Onozawa

Yuichi Harada

Motoyoshi Kubouchi

Yoshihiro Ikura

Seiji Noguchi

Yosuke Sakurai

Michio Nemoto

There is provided a semiconductor device that includes a semiconductor substrate, which has an upper surface and a lower surface, and a drift region of an n-type conductivity provided at a position including the center of the semiconductor substrate in a depth direction connecting the upper surface and the lower surface. Over the entire part of the drift region in the depth direction, a donor concentration of the drift region is higher than a base doping concentration of the semiconductor substrate.

Semiconductor device and method for manufacturing

Provided is a semiconductor device including a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. One or more N-type regions with an N-type conductivity are provided in the semiconductor substrate such that at least one N-type region among the one or more N-type regions includes the center position of the semiconductor substrate. An entire portion of the semiconductor substrate includes a bulk-acceptor having a bulk-acceptor concentration. A carrier concentration in all of the one or more N-type regions is higher than the bulk-acceptor concentration.

Semiconductor device and manufacturing method of semiconductor device

A semiconductor device, including a semiconductor substrate having a transistor portion and a diode portion, a drift region of a first conductivity type provided in the semiconductor substrate, a first electrode provided on one main surface side of the semiconductor substrate, and a second electrode provided on another main surface side of the semiconductor substrate, is provided. The diode portion includes a high concentration region and a crystalline defect region. The high concentration region has a higher doping concentration than the drift region and includes hydrogen. The doping concentration of the high concentration region at a peak position in a depth direction of the semiconductor substrate is equal to or less than 1.0×10/cm. The crystalline defect region is provided on the one main surface side of the semiconductor substrate relative to the peak position, has a higher crystalline defect density than the drift region, and includes hydrogen.

Semiconductor device and semiconductor device manufacturing method

A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.

Semiconductor device and manufacturing method thereof

There is provided a semiconductor device, a hydrogen concentration distribution has a hydrogen concentration peak, a helium concentration distribution has a helium concentration peak, and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak; the hydrogen concentration peak and the first donor concentration peak are located at a first depth, and the helium concentration peak and the second donor concentration peak are located at a second depth; each concentration peak has an upward slope; and a value which is obtained by normalizing a gradient of the upward slope of the second donor concentration peak by a gradient of the upward slope of the helium concentration peak is smaller than a value which is obtained by normalizing a gradient of the upward slope of the first donor concentration peak by a gradient of the upward slope of the hydrogen concentration peak.

Provided is a semiconductor device, comprising: a semiconductor substrate having an upper surface, a lower surface, and a center position equidistant from the upper surface and the lower surface in a depth direction of the semiconductor substrate. An N-type region with an N-type conductivity is provided in the semiconductor substrate such that the N-type region includes the center position of the semiconductor substrate. The N-type region includes an acceptor with a concentration that is a lower concentration than a carrier concentration, and is 0.001 times or more of a carrier concentration at the center position of the semiconductor substrate.

Provided is a semiconductor device including a semiconductor substrate; a hydrogen donor that is provide inside the semiconductor substrate in a depth direction, has a doping concentration that is higher than a doping concentration of a dopant of the semiconductor substrate, has a doping concentration distribution peak at a first position that is a predetermined distance in the depth direction of the semiconductor substrate away from one main surface of the semiconductor substrate, and has a tail of the doping concentration distribution where the doping concentration is lower than at the peak, farther on the one main surface side than where the first position is located; and a crystalline defect region having a crystalline defect density center peak at a position shallower than the first position, in the depth direction of the semiconductor substrate.

A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.

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Matsumoto, Japan

Misaki Meguro