Samsung Electronics Co., Ltd.

Misaichi Takeuchi

Mi Hyun Kim

Sam Mook Kang

Young Soo Park

Young Jo Tak

Jun Youn Kim

A method of manufacturing a semiconductor substrate may include forming a first semiconductor layer on a growth substrate, forming a second semiconductor layer on the first semiconductor layer, forming a plurality of voids in the first semiconductor layer by removing portions of the first semiconductor layer that are exposed by a plurality of trenches in the second semiconductor layer, forming a third semiconductor layer on the second semiconductor layer and covering the plurality of trenches, and separating the second and third semiconductor layers from the growth substrate. on the first semiconductor layer. The third semiconductor layer are grown from the second semiconductor layer and extend above the second semiconductor layer.

Growing community of inventors

Hwaseong-si, South Korea

Misaichi Takeuchi