Commissariat a L'energie Atomique Et Aux Energies Alternatives

Miryam Elouneg-Jamroz

Ivan-Christophe Robin

Armelle Even

Disclosed is a light-emitting diode containing: first and second semiconductor layers respectively n-doped and p-doped, forming a p-n junction; an active zone placed between the first and second layers, including an InGaN emitting layer able to form a quantum well, and two InGaN, where 0&#x3c;Y&#x3c;X, barrier layers between which the emitting layer is placed; and an intermediate layer, which is placed either in the barrier layer located between the emitting layer and the first layer and portions of which are then on either side of the intermediate layer, or placed between the barrier layer and the emitting layer. The intermediate layer includes a III-N semiconductor of bandgap wider than that of the barrier layer. The second layer includes GaN or InGaN, where 0&#x3c;W&#x3c;Y, and the first layer includes InGaN, where V&#x3e;W&#x3e;0.

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Grenoble, France

Miryam Elouneg-Jamroz