International Business Machines Corporation

Mirja Richter

Lukas Czornomaz

Jens Hofrichter

Heike E Riel

Bert Jan Offrein

Jean Fompeyrine

A semiconductor structure and a method for manufacturing the semiconductor structure are provided. The semiconductor structure includes a processed semiconductor substrate. The processed semiconductor substrate includes active electronic components. The semiconductor structure also includes a dielectric layer that covers, at least partially, the processed semiconductor substrate. An interface layer that is suitable for growing optically active material on the interface layer is bonded to the dielectric layer. An optical gain layer and the processed semiconductor substrate are connected through the dielectric layer by electric and/or optical contacts.

Semiconductor structure and method for manufacturing a semiconductor structure

A semiconductor device for use in an optical application and a method for fabricating the device. The device includes: an optically passive aspect that is operable in a substantially optically passive mode; and an optically active material having a material that is operable in a substantially optically active mode, wherein the optically passive aspect is patterned to include a photonic structure with a predefined structure, and the optically active material is formed in the predefined structure so as to be substantially self-aligned in a lateral plane with the optically passive aspect.

Method for fabricating a semiconductor device for use in an optical application

The present invention relates to a semiconductor device () for use in at least an optical application comprising: at least an optically passive aspect () that is operable in substantially an optically passive mode, and at least an optically active material () comprising at least a material that is operable in substantially an optically active mode, wherein: the optically passive aspect () further comprises at least a crystalline seed layer (), the optically active material () being epitaxially grown in at least a predefined structure () provided in the optically passive aspect () that extends to at least an upper surface (') of the crystalline seed layer (), and the optically passive aspect () is structured to comprise at least a passive photonic structure (), wherein the crystalline seed layer () comprises a crystalline wafer and wherein the optically active material () comprises at least one of: a III-V material and a II-VI material.

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Kilchberg, Switzerland

Mirja Richter