Asml Netherlands B.v.

Asml Holding N.v.

Applied Materials, Inc.

Mircea Dusa

Arie Jeffrey Den Boef

Antoine Gaston Marie Kiers

Maurits Van Der Schaar

Paul Frank Luehrmann

Arno Jan Bleeker

Henricus Petrus Maria Pellemans

Youri Johannes Laurentius Maria Van Dommelen

Richard Johannes Franciscus Van Haren

Cedric Desire Grouwstra

Markus Gerardus Martinus Van Kraaij

Harry Sewell

Maya Angelova Doytcheva

Everhardus Cornelis Mos

Hugo Augustinus Joseph Cramer

Hans Van Der Laan

Markus Gerardus Martinus Maria Van Kraaij

Manfred Gawein Tenner

Jozef Maria Finders

Antonius Johannes Josephus Van Dijsseldonk

Axel Nackaerts

Cédric Désiré Grouwstra

Wilhelmus Maria Corbeij

Gustaaf Verhaegen

Martinus Hendrikus Antonius Leenders

Sander Frederik Wuister

Pieter Willem Herman De Jager

Justin Lloyd Kreuzer

Scott Anderson Middlebrooks

Martijn Houben

Thomas Poiesz

Irwan Dani Setija

Christianus Gerardus Maria De Mol

Abraham Alexander Soethoudt

Reinder Teun Plug

Stefan Carolus Jacobus Antonius Keij

Tamara Druzhinina

Paul Jacques Van Wijnen

Antonie Hendrik Verweij

Bo Su

Justin Johannes Hermanus Gerritzen

Marco Adrianus Peter Van Den Heuvel

Alexander Hendrikus Martinus Van Der Hoff

Paul Van Dongen

Alek Chi-Heng Chen

Niek Elout De Kruijf

Tsann-Bim Chiou

Robertus Wilhelmus Van Der Heijden

Frank Bornebroek

Luis Alberto Colina Santamaria Colina

Eric Henri Jan Hendrickx

Johannes Gerardus Maria Mulder

Dongzi Wangli

Geert Vandenberghe

Hugo Augustine Joseph Cramer

Maurits Van Der Sohaar

An apparatus and method to determine a property of a substrate by measuring, in the pupil plane of a high numerical aperture lens, an angle-resolved spectrum as a result of radiation being reflected off the substrate. The property may be angle and wavelength dependent and may include the intensity of TM- and TE-polarized radiation and their relative phase difference.

Method and apparatus for angular-resolved spectroscopic lithography characterization

A substrate support, includes: a substrate support location configured to support a substrate, and a vacuum clamping device configured to clamp the substrate on the substrate support location, wherein the vacuum clamping device includes at least one reduced pressure source to create a reduced pressure, at least one vacuum section connected to the at least one reduced pressure source, wherein the at least one vacuum section is configured to attract the substrate towards the substrate support location, and a control device configured to control a spatial pressure profile along the at least one vacuum section with which the substrate is attracted by the vacuum clamping device, wherein the control device includes a substrate shape data input to receive substrate shape data representing shape data of the substrate to be clamped, and wherein the control device is configured to adapt the spatial pressure profile in dependency of the substrate shape data.

Substrate support, method for loading a substrate on a substrate support location, lithographic apparatus and device manufacturing method

A method of forming a plurality of regularly spaced lithography features, the method including providing a self-assemblable block copolymer having first and second blocks in a plurality of trenches on a substrate, each trench including opposing side-walls and a base, with the side-walls having a width therebetween, wherein a first trench has a greater width than a second trench; causing the self-assemblable block copolymer to self-assemble into an ordered layer in each trench, the layer having a first domain of the first block alternating with a second domain of the second block, wherein the first and second trenches have the same number of each respective domain; and selectively removing the first domain to form regularly spaced rows of lithography features having the second domain along each trench, wherein the pitch of the features in the first trench is greater than the pitch of the features in the second trench.

Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers

A system and method of manufacturing a semiconductor device lithographically and an article of manufacture involving a lithographic double patterning process having a dye added to either the first or second lithographic pattern are provided. The dye is used to detect the location of the first lithographic pattern and to directly align the second lithographic pattern to it. The dye may be fluorescent, luminescent, absorbent, or reflective at a specified wavelength or a given wavelength band. The wavelength may correspond to the wavelength of an alignment beam. The dye allows for detection of the first lithographic pattern even when it is over coated with a radiation sensitive-layer (e.g., resist).

Alignment target contrast in a lithographic double patterning process

In a multiple patterning techniques, where two or more exposures are used to form a single layer of a device, the splitting of features in a single layer between the multiple exposures is carried out additionally with reference to features of another associated layer and the splitting of that layer into two or more sets of features for separate exposure. The multiple exposure process can be a process involving repeated litho-etch steps desirably, the alignment scheme utilized during exposure of the split layers is optimized with reference to the splitting approach.

Method of preparing a pattern, method of forming a mask set, device manufacturing method and computer program

Improving alignment target contrast in a lithographic double patterning process

A semiconductor wafer is aligned using a double patterning process. A first resist layer having a first optical characteristic is deposited and foams at least one alignment mark. The first resist layer is developed. A second resist layer having a second optical characteristic is deposited over the first resist layer. The combination of first and second resist layers and alignment mark has a characteristic such that radiation of a pre-determined wavelength incident on the alignment mark produces a first or higher order diffraction as a function of the first and second optical characteristics.

Method and system for increasing alignment target contrast

Variables in each step in a double patterning lithographic process are recorded and characteristics of intermediate features in a double patterning process measured. The final feature is then modeled, and the values of the variables optimized.

Optimization method and a lithographic cell

A method is described for alignment of a substrate during a double patterning process. A first resist layer containing at least one alignment mark is formed on the substrate. After the first resist layer is developed, a second resist layer is deposited over the first resist layer, leaving a planar top surface (i.e., without topography). By baking the second resist layer appropriately, a symmetric alignment mark is formed in the second resist layer with little or no offset error from the alignment mark in the first resist layer. The symmetry of the alignment mark formed in the second resist can be enhanced by appropriate adjustments of the respective thicknesses of the first and second resist layers, the coating process parameters, and the baking process parameters.

Apparatus and method for providing resist alignment marks in a double patterning lithographic process

A method of measuring a property of a substrate includes generating a patterned mask configured to cause a radiation beam passing through the mask to acquire the pattern, simulating radiating the substrate with a patterned radiation beam that has been patterned using the mask to obtain a simulated pattern, determining at least one location of the simulated pattern that is prone to patterning errors, and irradiating the substrate with the patterned radiation beam using a lithographic process. The method also includes measuring an accuracy of at least one property of the at least one location of the pattern on the substrate that has been determined as being prone to patterning errors, and adjusting the lithographic process according to the measuring.

Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method

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Mircea Dusa