Samsung Electronics Co., Ltd.

Miram Kwon

Seokcheon Baek

Younghwan Son

Seongjun Seo

Junyong Park

Jiho Lee

A semiconductor device includes a substrate having cell and connection regions, and a stack structure having dielectric layers and electrodes that are vertically and alternately stacked on the substrate. The stack structure includes a first pad part, a first fence part, a second pad part, and a second fence part that are sequentially arranged along a first direction. Each of the first and second pad parts has a first stepwise structure formed along the first direction and a second stepwise structure formed along a second direction that intersects the first direction, and each of the first and second fence parts includes dummy electrodes at the same levels as the electrodes and spaced apart from the electrodes. Sidewalls of the electrodes that define second stepwise structure of the second part are offset from sidewalls of the dummy electrodes that define second dummy stepwise structure of the first pad part.

Semiconductor device, electronic system including the same, and method of fabricating the same

A semiconductor device includes a first substrate, circuit elements, lower interconnection lines, a second substrate, gate electrodes stacked on the second substrate to be spaced apart from each other in a first direction and forming first and second stack structures, channel structures penetrating through the gate electrodes, and first and second contact plugs penetrating through the first and second stack structures, respectively, and connected to the gate electrodes. The first stack structure has first pad areas in which the gate electrodes extend further than upper gate electrodes, respectively, and are connected to the first contact plugs, respectively. The second stack structure has second pad areas in which the gate electrodes extend further than upper gate electrodes, respectively, and are connected to the second contact plugs, respectively. The first and second pad areas are offset in relation to each other so as not to overlap each other in the first direction.

Semiconductor devices and data storage systems including the same

Provided is a three-dimensional semiconductor memory device including a first substrate that includes a cell array region and a connection region; first and second electrode layers that are sequentially stacked and spaced apart from each other on the first substrate, and an end portion of the first electrode layer and an end portion of the second electrode layer are offset from each other on the connection region; a first cell contact penetrating the second electrode layer and the first electrode layer such as to be connected to the second electrode layer on the connection region; and a first contact dielectric pattern between the first cell contact and the first electrode layer. The first cell contact includes columnar part that vertically extends from a top surface of the first substrate, and a connection part that laterally protrudes from the columnar part and contacts the second electrode layer.

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Suwon-si, South Korea

Miram Kwon