Skhynix Inc.

Mir Im

Won Tae Koo

A semiconductor device includes a memory cell including a write transistor and a read transistor that are electrically connected to each other. The write transistor includes a write bit line disposed over a substrate, a write channel structure disposed on the write bit line and extending in a direction perpendicular to a surface of the substrate on the write bit line, a write gate dielectric layer disposed on a side surface of the write channel structure, and a write word line disposed on the write gate dielectric layer. The read transistor includes a read gate electrode layer disposed on the write channel structure, a read gate dielectric layer disposed on the read gate electrode layer, a read channel layer disposed on the read gate dielectric layer, and a read word line and a read bit line that are disposed at opposite ends of the read channel layer.

Semiconductor device including write transistor and read transistor having read word line and read bit line at opposite ends of read channel layer

A semiconductor device includes: a substrate; a seed layer over the substrate; a perovskite-based channel layer over the seed layer; a bit line coupled to one side of the perovskite-based channel layer and extending in a direction perpendicular to the substrate; a capacitor coupled to another side of the perovskite-based channel layer; a word line crossing an upper surface of the perovskite-based channel layer; and a gate dielectric layer disposed between the word line and the perovskite-based channel layer.

Semiconductor device and method for fabricating the same

A semiconductor device according to an embodiment of the present disclosure includes a write transistor and a read transistor disposed over a substrate. The write transistor includes a write word line disposed on a plane that is substantially parallel to a surface of the substrate over the substrate, a write gate dielectric layer disposed over the write word line, a write channel layer disposed over the write gate dielectric layer, and a write bit line disposed over the substrate and extending in a direction substantially perpendicular to a surface of the substrate, and electrically connected to one end of the write channel layer. The read transistor includes a read channel layer disposed on the plane over the substrate, a read gate dielectric layer disposed over the read channel layer, and a read gate electrode layer disposed over the read gate dielectric layer and electrically connected to the other end of the write channel layer.

Semiconductor device including write transistor and read transistor disposed on a plane substantially parallel to substrate

In a method of treating a target film, a plurality of pattern structures with sidewall surfaces facing each other are provided. A target film is formed on the sidewalls of the plurality of pattern structures. A plurality of nanoparticles are distributed on the target thin film. The target thin film is thermally treated by irradiating laser light from upper sides of the plurality of pattern structures to the target thin film. The irradiated laser light is scattered from the plurality of nanoparticles.

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Gyeonggi-do, South Korea

Mir Im