Asml Netherlands B.v.

Mir Farrokh Shayegan Salek

Rafael C Howell

Thomas Ingolf Wallow

Jen-Shiang Wang

Hermanus Adrianus Dillen

Mu Feng

Adam Lyons

Leiwu Zheng

Dianwen Zhu

Peng-cheng Yang

Methods of constructing a process model for simulating a characteristic of a product of lithography from patterns produced under different processing conditions. The methods use a deviation between the variation of the simulated characteristic and the variation of the measured characteristic to adjust a parameter of the process model.

Methods of tuning process models

A method including providing a plurality of unit cells for a plurality of gauge patterns appearing in one or more images of one or more patterning process substrates, each unit cell representing an instance of a gauge pattern of the plurality of gauge patterns, averaging together image information of each unit cell to arrive at a synthesized representation of the gauge pattern, and determining a geometric dimension of the gauge pattern based on the synthesized representation.

Method and apparatus for pattern correction and verification

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Santa Clara, CA, United States of America

Mir Farrokh Shayegan Salek