Seagate Technology Incorporated

Minzhen Cai

Shaun Eric McKinlay

ZhiGuo Ge

Cheng Bi

A method of planarizing a device having a surface topography with at least one material at a surface of the device is described. The method comprises the steps of depositing a stop layer over at least a portion of the at least one material which substantially retains the surface topography of the device. A sacrificial layer is deposited over at least a portion of the stop layer. A planarization process is performed on the device. The planarization process includes the steps of performing a chemical mechanical polish (CMP) on the top surface of the sacrificial layer. A physical removal step is conducted on the remainder portion of the sacrificial layer to form a planarized surface. A second CMP step and a second physical removal step are conducted, to form a planarized device.

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Eden Prairie, MN, United States of America

Minzhen Cai