Samsung Electronics Co., Ltd.

Minyong Kim

Junho Choi

Yongwon Cho

Sangwon Park

Kuihan Ko

Gyunghoon Lee

Samyeol Kang

Jekyung Choi

A non-volatile memory device is provided. The memory device includes: word lines stacked on a substrate; a string select lines on the word lines, the string select lines being spaced apart from each other in a first horizontal direction and extending in a second horizontal direction; and a memory cell array including memory blocks, each of which includes memory cells connected to the word lines and the string select lines. The string select lines include a first string select line, and a second string select line which is farther from a word line cut region than the first string select line, and a program operation performed on second memory cells connected to a selected word line and the second string select line is performed before a program operation performed on first memory cells connected to the selected word line and the first string select line.

Non-volatile memory device

According to an embodiment, disclosed is an electronic device that includes an external interface module including a printed circuit board and at least one part disposed on the printed circuit board, a protective structure including at least one hole area that isolates at least a portion of the at least one part, and a housing that provides at least a bottom portion on which the protective structure is seated. Besides, it may be permissible to prepare various other embodiments speculated through the specification.

Electronic device including housing in which protective structure is disposed

Growing community of inventors

Gyeonggi-do, South Korea

Minyong Kim