Samsung Electronics Co., Ltd.

Minwook Choi

Taehun Kim

Sungwook Lee

Minho Kim

Sanghyun Kim

Dongmyung Shin

JungWook Lee

Sumin Hwangbo

Yujung Kim

Provided is a semiconductor light emitting device including a base layer, a light emitting structure including a first semiconductor layer having a first conductivity, an active layer, and a second semiconductor layer having a second conductivity different from the first conductivity, a wavelength converting layer on the light emitting structure, a separation wall disposed adjacent to side surfaces of the wavelength converting layer, a first electrode metal layer on a lower surface of the first semiconductor layer, the first electrode metal layer including a reflection structure, and a second electrode metal layer electrically connected to the second semiconductor layer via through holes penetrating the first electrode metal layer, the first semiconductor layer, and the active layer, and exposing the second semiconductor layer, wherein the semiconductor light emitting device is configured to implement gradation in a first direction based on adjusting at least one of the light emitting structure on an upper surface of the second semiconductor layer, the reflection structure, the separation wall, and a structure included in the light emitting structure.

Semiconductor light emitting device and light emitting device assembly including the same

A light emitting device may include a light emitting structure, a transparent electrode, a first insulation layer, a first electrode, a second insulation layer and a second electrode. The light emitting structure may include a first semiconductor layer, an activation layer and a second semiconductor layer sequentially stacked. The transparent electrode may be formed on an upper surface of the second semiconductor layer. The transparent electrode may have at least one opening. The first insulation layer may be formed on an upper surface of the transparent electrode to fill the at least one opening. The first electrode may be formed on an upper surface of the first insulation layer. The first electrode may include a contact extending through the first insulation layer and connected with the transparent electrode. The second insulation layer may be formed on an upper surface of the first electrode. The second electrode may be formed on an upper surface of the second insulation layer. The second electrode may be electrically connected with the first semiconductor layer.

Light emitting device

Growing community of inventors

Seoul, South Korea

Minwook Choi