Samsung Electronics Co., Ltd.

Samsung Display Co., Ltd.

Yonsei University

Minwoo Choi

Changseung Lee

Wooyoung Yang

Dongho Ahn

Bonwon Koo

Hajun Sung

Taewoong Kim

Kihyun Kim

Kwangmin Park

Kiyeon Yang

Chungman Kim

Wonho Lee

Yongyoung Park

Jong-hyun Ahn

Jin Hwan Choi

Jong-Hyun Ahn

Young Jae Kang

Youngjae Kang

Heechang Shin

Luhing Hu

This display device may comprise: a display panel; a stress control layer which is disposed on the rear surface of the display panel and includes an auxetic structure having a negative Poisson's ratio; and a support layer which is disposed under the stress control layer and supports the display panel.

Display device

Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.

Switching device and memory device including the same

A memory device includes a memory cell including a selection layer and a phase change material layer, and a controller, wherein the selection layer includes a switching material, the phase change material layer includes a phase change material, and the controller is configured to apply a write pulse to the selection layer and the phase change material layer and control a polarity, a peak value, and a shape of the write pulse.

Memory device including switching material and phase change material

A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).

Semiconductor device including chalcogen compound and semiconductor apparatus including the same

Semiconductor device including layers with different chalcogen compounds and semiconductor apparatus including the same

A flexible display device includes a flexible substrate, an adhesion layer disposed on a surface of the flexible substrate, and a plurality of pixel structures in respective pixels on the adhesion layer. Each of the pixel structures on the adhesion layer includes a light emitting diode including an inorganic light emitting layer, and a thin film transistor which is connected to the light emitting diode and switches a state of the light emitting diode.

Flexible display device and method of manufacturing the same

Growing community of inventors

Suwon-si, South Korea

Minwoo Choi