Samsung Electronics Co., Ltd.

Minsu Choi

Yoosang Hwang

Keunnam Kim

Myeong-Dong Lee

Hyeon-Woo Jang

Sooho Shin

Disclosed are a semiconductor memory device and a method of fabricating the same. The device includes a substrate including an active pattern with doped regions, a gate electrode crossing the active pattern between the doped regions, a bit line crossing the active pattern and being electrically connected to one of the doped regions, a spacer on a side surface of the bit line, a first contact coupled to another of the doped regions and spaced apart from the bit line with the spacer interposed therebetween, a landing pad on the first contact, and a data storing element on the landing pad. The another of the doped regions has a top surface, an upper side surface, and a curved top surface that extends from the top surface to the upper side surface. The first contact is in contact with the curved top surface and the upper side surface.

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Suwon-si, Gyeonggi-do, South Korea

Minsu Choi