Samsung Electronics Co., Ltd.

Minseok Yoo

Hyeonjin Shin

Minsu Seol

Junyoung Kwon

Minhyun Lee

Van Luan Nguyen

Kyung-Eun Byun

Yeonchoo Cho

Keunwook Shin

Eunkyu Lee

An electronic device including a two-dimensional material is provided. The electronic device may include a substrate; a metal layer on a partial region of the substrate; a two-dimensional material layer over the metal layer and an upper surface of the substrate; and an insertion layer between the metal layer and the two-dimensional material layer.

Electronic device including two-dimensional material and method of manufacturing the same

Disclosed are a field effect transistor and a method of manufacturing the same. The field effect transistor includes a source electrode on a substrate, a drain electrode separated from the source electrode, and channels connected between the source electrode and the drain electrode, gate insulating layers, and a gate electrode. The channels may have a hollow closed cross-sectional structure when viewed in a first cross-section formed by a plane across the source electrode and the drain electrode in a direction perpendicular to the substrate. The gate insulating layers may be in the channels. The gate electrode may be insulated from the source electrode and the drain electrode by the gate insulating layers.

Field effect transistor including channels having a hollow closed cross-sectional structure and method of manufacturing the same

Disclosed are an electronic device including a two-dimensional material, and a method of fabricating the electronic device. The electronic device may include a first metal layer including a transition metal, a second metal layer on the first metal layer and including gold (Au), and a two-dimensional material layer between the first metal layer and the second metal layer. The two-dimensional material layer may include a transition metal dichalcogenide (TMD). The two-dimensional material layer may be formed as a chalcogen element diffuses into the second metal layer and reacts with the transition metal of the first metal layer adjacent to the second metal layer.

Electronic device including two-dimensional material and method of fabricating the same

A semiconductor device according to an embodiment may include a substrate, an adhesive layer, and a semiconductor layer. The semiconductor layer includes a 2D material having a layered structure. The adhesive layer is interposed between the substrate and the semiconductor layer, and has adhesiveness to a 2D material.

Semiconductor device including two-dimensional material

Provided are two-dimensional material (2D)-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices. A 2D material-based field effect transistor includes a substrate; first to third 2D material layers on the substrate; an insulating layer on the first 2D material layer; a source electrode on the second 2D material layer; a drain electrode on the third 2D material layer; and a gate electrode on the insulating layer. The first 2D material layer is configured to exhibit semiconductor characteristics, and the second and third 2D material layers are metallic 2D material layers. The first 2D material layer may include a first channel layer of a 2D material and a second channel layer of a 2D material. The first 2D material layer may partially overlap the second and third 2D material layers.

Two-dimensional material-based wiring conductive layer contact structures, electronic devices including the same, and methods of manufacturing the electronic devices

A method of patterning a 2D material layer is includes selectively forming a first material layer on a surface of a substrate to form a first region in which the first material layer covers the surface of the substrate and to further form a second region in which the surface of the substrate is exposed from the first material layer, the first material layer having a strong adhesive force with a 2D material. The method further includes forming a 2D material layer is formed in both the first region and the second region. The method further includes selectively removing the 2D material layer from the second region based on using a physical removal method, such that the 2D material layer remains in the first region.

Growing community of inventors

Suwon-si, South Korea

Minseok Yoo