Samsung Electronics Co., Ltd.

International Business Machines Corporation

Infineon Technologies Ag

Advanced Micro Devices Corporation

Minseok Oh

Taechan Kim

Tien-Jen Cheng

Hyeok-Sang Oh

Bum-Ki Moon

Woo-Jin Jang

Ji-Hong Choi

JungChak Ahn

Moo-young Kim

Sungsoo Choi

Han Soo Lee

Moosup Lim

Jae Sung Shin

Jae-Cheol Yun

Soonik Cho

Hyoungsoo Ko

Haekyung Kong

An image sensor is provided which includes a plurality of unit pixels, ones of which are configured to convert an input light signal into at least four frame signals. The image sensor also includes a signal processor that is configured to measure a distance from an object based on the at least four frame signals from one of the plurality of unit pixels.

Unit pixel and image sensor comprising the unit pixel circuit

An image device including a pixel array and a controller, The pixel array having first pixels and second pixels and corresponding channel drivers. The controller may perform operations of a dynamic vision sensor (DVS), an ambient light sensor (ALS) and a proximity sensor (PS).

Image device including dynamic vision sensor, ambient light sensor and proximity sensor function

CMOS image sensors are provided. A CMOS image sensor may include a semiconductor substrate including a light-receiving region and a logic region adjacent the light-receiving region. The CMOS image sensor may include a photoelectric conversion region in the light-receiving region. Moreover, the CMOS image sensor may include an isolation region including an interface with a sidewall of the photoelectric conversion region. The isolation region may include a first refractive index that is smaller than a second refractive index of the semiconductor substrate, and the isolation region may be between the logic region and the sidewall of the photoelectric conversion region.

CMOS image sensors including an isolation region adjacent a light-receiving region

Methods of forming integrated circuit devices include forming an interlayer insulating layer having a trench therein, on a substrate and forming an electrical interconnect (e.g., Cu damascene interconnect) in the trench. An upper surface of the interlayer insulating layer is recessed to expose sidewalls of the electrical interconnect. An electrically insulating first capping pattern is formed on the recessed upper surface of the interlayer insulating layer and on the exposed sidewalls of the electrical interconnect, but is removed from an upper surface of the electrical interconnect. A metal diffusion barrier layer is formed on an upper surface of the electrical interconnect, however, the first capping pattern is used to block formation of the metal diffusion barrier layer on the sidewalls of the electrical interconnect. This metal diffusion barrier layer may be formed using an electroless plating technique.

Methods of forming integrated circuit devices having damascene interconnects therein with metal diffusion barrier layers and devices formed thereby

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Osan-si, South Korea

Minseok Oh