Boe Technology Group Co., Ltd.

Beijing Boe Display Technology Co., Ltd.

Minqi Chen

Tao Liu

Lianjie Qu

Yonglian Qi

Shi Shu

Hebin Zhao

Dejiang Zhao

Shuai Liu

Huijuan Wang

Bingqiang Gui

Yunyun Tian

Zezhou Yang

Guangdong Shi

This disclosure provides a liquid crystal display panel. The liquid crystal display panel comprises: a first substrate and a second substrate arranged oppositely, a plurality of main spacers located between the first substrate and the second substrate for supporting cell gap of the liquid crystal display panel, a plurality of auxiliary spacers located between the first substrate and the second substrate, and a plurality of pressure sensing electrodes in one-to-one correspondence with the plurality of auxiliary spacers; wherein a height of the auxiliary spacer is smaller than a height of the main spacer; a material of the auxiliary spacer is a piezoelectric material. This disclosure also discloses a manufacturing method of the liquid crystal display panel and a display device comprising the liquid crystal display panel.

Liquid crystal display panel, manufacturing method thereof and display device

The present disclosure relates to the field of display technologies, and especially discloses a backlight device and a method for manufacturing the same. The backlight device includes a backlight source, a light guide plate, a reflective layer, an optical adhesive layer and an outcoupling structure. Specifically, in the backlight device, the reflective layer and the light guide plate are located on opposite sides of the backlight source respectively.

Backlight device and manufacturing method thereof

This disclosure relates to a field-effect transistor and a production method thereof, an array substrate and a production method thereof, and a display panel. The production method comprises: forming an active layer on a substrate; forming a gate electrode insulating layer on the active layer to define a gate electrode area as well as a source electrode area and a drain electrode area located on two sides of the gate electrode area on the active layer; applying a gate electrode layer to cover surfaces of the active layer and the gate electrode insulating layer; patterning the gate electrode layer to form a first contact electrode, a second contact electrode, and a gate electrode, wherein the first contact electrode is located on the source electrode area, the second contact electrode is located on the drain electrode area, and the gate electrode is located on the gate electrode insulating layer.

Production method of field-effect transistor, production method of array substrate, field-effect transistor, array substrate, and display panel

Growing community of inventors

Beijing, China

Minqi Chen