Nippon Telegraph and Telephone Public Corporation

Hitachi, Ltd.

Nippon Telegraph and Telephone Corporation

Minpei Fujinami

Akira Kikuchi

Nobuo Shimazu

Masahiro Yoshizawa

Kou Wada

Susumu Ozasa

Kenji Maio

Masahide Okumura

Norio Saitou

Norio Yokozawa

Yasuo Kato

Mitsuo Ooyama

Yoshio Sakitani

Tsutomu Komoda

Atsushi Iwata

Akinori Shibayama

Katsuhiro Harada

Satoshi Ido

Kenji Fujikata

Kazumi Iwadate

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated includes leakage characteristics and a capacitance.

Method and apparatus for evaluating the capacitance of an integrated

A charged beam radiation apparatus includes an auxiliary charged beam emitting mechanism, a main charged beam emitting mechanism, a secondary electron detector, and a computer as a controller. The auxiliary charged beam emitting mechanism emits an auxiliary charged beam of a given acceleration voltage onto a predetermined portion of an electronic device to be measured. The main charged beam emitting mechanism emits a main charged beam of an acceleration voltage lower than that of the auxiliary charged beam onto the predetermined portion and the vicinity of the predetermined portion. The secondary electron detector detects secondary electrons generated from a portion irradiated by the main charged beam. The controller measures a change in a secondary electron signal from the secondary electron detector.

Charged beam radiation apparatus

A method and apparatus for testing an integrated electronic device wherein the integrated electronic device to be tested is placed on a sample table. A predetermined position of the integrated electronic device is irradiated with the primary charged beam. A substrate current flowing through a substrate of the integrated electronic device is measured upon radiation of the primary charged beam, and then a potential of the predetermined position irradiated with the primary charged beam is nondestructively measured in accordance with secondary electrons emitted from the predetermined position. A function of the integrated electronic device is evaluated in accordance with the substrate current and the predetermined position potential. The function to be evaluated include leakage characteristics and a capacitance.

Method and apparatus for testing integrated electronic device

In a characteristic test apparatus for an electronic device, a number of voltage supply beams are radiated onto predetermined irradiation positions of the electronic device placed on a sample table. In addition, a potential measuring beam is radiated onto a number of irradiation positions including the predetermined irradiation positions of the voltage supply beams. A secondary electron signal based on the potential measuring beam is detected to measure a potential. When the irradiation position of the potential measuring beam coincides with that of the voltage supply beam, the voltage supply beam is controlled to adjust a potential at the irradiation position to a set value by controlling, e.g., an acceleration power source for the voltage supply beam. When the irradiation position of the potential measuring beam is different from that of the voltage supply beam, a potential at this position is measured. Then, characteristics of the electronic device are calculated based on the obtained potentials at the respective irradiation positions.

Characteristic test apparatus for electronic device and method for using

An electron beam lithography apparatus comprises: a spot electron beam generator; device for exposing a desired pattern onto a wafer using the spot beam; device for dividing the pattern into small regions; and device for designating an origin of the small region and also digitally scanning the portion inside the small region by a fixed correction amount by use of the spot beam, and thereby to reduce the settling time of the D/A converter in association with the digital scanning.

Electron beam lithography apparatus

A position detecting system suitable for the position control of the surface of a workpiece mounted in an electron beam exposure system is disclosed which includes an electrically-driven light source, a first optical system for focusing a light beam from the light source on a workpiece, a position-controlling table for mounting thereon the workpiece, a second optical system for focusing light reflected from the workpiece on a predetermined image surface, a photodetector having a light receiving surface arranged on the image surface, and a negative feedback amplifier for controlling the light source by the output of the photodetector.

Position detecting system

An electron beam deflection control system includes a first signal generation circuit which generates a triangular signal varying at a comparatively low speed, a second signal generation circuit which generates a stepped signal varying at a comparatively high speed, and a switching arrangement to change over the first and second signal generation circuits and to drive one of them, whereby the signal from the generation circuit selected by the switching arrangement is used as a deflection signal for an electron beam.

Control system for deflecting an electron beam

Growing community of inventors

Tokyo, Japan

Minpei Fujinami