Olympus Optical Company, Ltd.

Hitachi-high-technologies Corporation

Hitachi High-tech Corporation

Olympus Optical

Minoru Yamazaki

Hisao Yabe

Yoshihiro Iida

Yoshio Tashiro

Osamu Tamada

Akira Suzuki

Hideo Ito

Hideyuki Kazumi

Hideo Itoh

Hiroshi Ishii

Akira Ikegami

Yuko Sasaki

Keiichi Arai

Makoto Suzuki

Yasuhito Kura

Koji Yamaya

Masaaki Nakazawa

Yuzuru Mizuhara

Takeshi Yokoi

Toshiyuki Yokosuka

Osamu Nasu

Kazunari Asao

Miki Isawa

Jin Kira

Hajime Kawano

Hiroshi Makino

Takashi Doi

Hisaya Murakoshi

Noritsugu Takahashi

Shigeru Nakajima

Yosuke Yoshimoto

Wataru Mori

Tatsuya Furukawa

Koichiro Takeuchi

Manabu Yano

Takeshi Mizuno

Yuzuru Mochizuki

Yuki Ojima

Tomohito Nakano

Hiroyuki Takahashi

Hitoshi Tamura

Hiroki Hibino

Wen Zheng Li

Souichi Katagiri

Makoto Sakakibara

Takahiro Kishi

Yoshinori Momonoi

Daisuke Bizen

Shahedul Hoque

Shinichi Murakami

Keigo Kasuya

Kazutami Tago

Ichiro Nakamura

Shunsuke Mizutani

Motokazu Nakamura

Yasuyuki Futatsugi

Ryota Watanabe

Soichiro Matsunaga

Naruto Shinkai

Kaori Bizen

Tsutomu Ishiguro

Hideki Itai

Hiroshi Nishihama

Osamu Tamda

Toshiyuki Kubonoya

Yoshio Tashibo

U Oh

Erina Kawamoto

Tetsuya Sawahata

Wataru Yamane

Yuuji Kasai

The present invention provides a charged particle beam device with which optimal parameters for the device can be effectively derived in a short time period. This charged particle beam device comprises: an electron gun () that irradiates a sample () with an electron beam (); an image processing unit () that acquires an image of the sample () from a signal () generated by the sample () due to the electron beam (); a database () that holds correspondence between a first parameter that is an optical condition, a second parameter that is a value pertaining to device performance, and a third parameter that is information pertaining to the device configuration, and stores a plurality of analysis values and measurement values; and a learning machine () that searches the database () and derives a first parameter that satisfies a target value of the second parameter.

Charged particle beam device

The invention provides an electron beam apparatus that reduces a time required for an electron gun chamber to which a sputter ion pump and a non-evaporable getter pump are connected to reach an extreme high vacuum state. The electron beam apparatus includes an electron gun configured to emit an electron beam and the electron gun chamber to which the sputter ion pump and the non-evaporable getter pump are connected. The electron beam apparatus further includes a gas supply unit configured to supply at least one of hydrogen, oxygen, carbon monoxide, and carbon dioxide to the electron gun chamber.

Electron beam apparatus and method for controlling electron beam apparatus

A charged particle beam device capable of generating an image having uniform image quality in a field of view is provided. The charged particle beam device includes: a beam source configured to irradiate a sample with a charged particle beam; a diaphragm including an opening used for angle discrimination of secondary charged particles emitted from the sample; a first detector provided closer to the sample than the diaphragm, and configured to detect a part of the secondary charged particles; a second detector provided closer to the beam source than the diaphragm, and configured to detect secondary charged particles passing through the opening; an image generation unit configured to generate an image based on a first signal output from the first detector or a second signal output from the second detector; and a composite ratio calculation unit configured to calculate a composite ratio for each position in a field of view based on the first signal or the second signal with respect to a calibration sample that is a sample having a flat surface. The image generation unit generates a composite image by synthesizing the first signal and the second signal with respect to an observation sample using the composite ratio.

An object of the invention is to correct an aberration or a defocus of an electron beam for irradiation, and control an influence on a deflector by a fluctuation in an electric field of an electrostatic lens. The invention provides a charged particle beam apparatus including a deflector that deflects a charged particle beam with which a specimen is irradiated, an objective lens that focuses the charged particle beam on the specimen, an electrostatic lens that includes a part of the objective lens and to which a voltage for correcting the aberration or the defocus of the charged particle beam is applied, and an constant electric field applying electrode that is provided between the deflector and the electrostatic lens and to which a constant voltage having a same sign with the voltage applied to the electrostatic lens is applied.

Charged particle beam apparatus

An object of the present disclosure is to propose a charged particle beam device capable of appropriately evaluating and setting a beam aperture angle. As one aspect for achieving the above-described object, provided is a charged particle beam device which includes a plurality of lenses and controls the plurality of lenses so as to set a focus at a predetermined height of a sample and to adjust the beam aperture angle. The charged particle beam device generates a first signal waveform based on a detection signal obtained by scanning with the beam in a state where the focus is set at a first height that is a bottom portion of a pattern formed on the sample, calculates a feature amount of a signal waveform on a bottom edge of the pattern based on the first signal waveform, and calculates the beam aperture angle based on the calculated feature amount.

The purpose of the present invention is to provide a charged particle beam device which adjusts brightness and contrast or adjusts focus and the like appropriately in a short time even if there are few detected signals. Proposed as an aspect for achieving this purpose is a charged particle beam device provided with: a detector for detecting charged particles obtained on the basis of irradiation of a specimen with a charged particle beam emitted from a charged particle source; and a control unit for processing a signal obtained on the basis of the output of the detector, wherein the control unit performs statistical processing on gray level values in a predetermined region of an image generated on the basis of the output of the detector, and executes signal processing for correcting a difference between a statistical value obtained by the statistical processing and reference data relating to the gray level values of the image.

The present disclosure is to provide a charged particle beam device capable of achieving both high resolution by setting of a short WD and improvement of detection efficiency when setting a long WD. According to an aspect for achieving the above-described object, there is suggested a charged particle beam device including: an objective lens for converging a charged particle beam emitted from a charged particle source; a sample stage having a first driving mechanism for moving a sample to be irradiated with the charged particle beam between a first position and a second position more separated from the objective lens than the first position; a detection surface for detecting charged particles emitted from the sample; and a second driving mechanism for moving the detection surface between within a movable range of the sample between the first position and the second position and out of the movable range of the sample.

A charged particle beam device includes an electron source which generates an electron beam, an objective lens which is applied with a coil current to converge the electron beam on a sample, a control unit which controls the current to be applied to the objective lens, a hysteresis characteristic storage unit which stores hysteresis characteristic information of the objective lens, a history information storage unit which stores history information related to the coil current, and an estimation unit which estimates a magnetic field generated by the objective lens on the basis of the coil current, the history information, and the hysteresis characteristic information.

Charged particle beam device and capturing condition adjusting method in charged particle beam device

A low noise blanking unit corresponds to a wide range of acceleration voltages (from several times higher than related voltages to low acceleration voltages) of an electron beam. A blanking unit of the measurement and inspection device includes a blanking control circuit, in which (i) an upper and a lower blanking electrodes are arranged in the irradiation direction of an electron beam; electrodes on the reverse sides of two opposing electrodes in each of the blanking electrodes arranged in the same direction are connected with the ground, (ii) when blanking is ON, positive voltages are output to remaining electrodes of the upper blanking electrode and negative voltages are output to remaining electrodes of the lower blanking electrode, and (iii) when the blanking is OFF, the same ground reference signal is output to the remaining electrodes of the upper blanking electrode and to the remaining electrodes of the lower blanking electrode.

Measurement and inspection device

A charged particle beam apparatus with reduced frequency of lens resetting operations and thus with improved throughput. The apparatus includes an electron source configured to generate an electron beam, an objective lens to which coil current is adapted to be applied to converge the electron beam on a sample, a focal position adjustment device configured to adjust the focal position of the electron beam, a detector configured to detect electrons from the sample, a display unit configured to display an image of the sample in accordance with a signal from the detector, a storage unit configured to store information on the hysteresis characteristics of the objective lens, and an estimation unit configured to estimate a magnetic field generated by the objective lens on the basis of the coil current, the amount of adjustment of the focal position by the focal position adjustment device, and the information on the hysteresis characteristics.

Charged particle beam apparatus and method for adjusting imaging conditions for the same

The objective of the present invention is to provide a charged particle beam device wherein scanning is performed through a scanning pattern that may suppress the influence from charge accumulation without having to perform blanking. In order to achieve this objective, a charged particle beam device is proposed wherein a first scan line is scanned by deflecting a charged particle beam in a first direction. The charged particle beam is deflected in a manner where the ending point of the first scan line is connected to the scan starting point of a second scan line which is arranged to be parallel to the first scan line so as to draw a scanning trajectory, thereby modifying the scan line position. The second scan line is scanned by scanning the charged particle beam from the scan starting point of the second scan line toward a second direction that is opposite to the first direction. After scanning the second scan line, the charged particle beam device scans the interior of a first frame by repeating the scan line position modification and the scanning of the charged particle beam toward the opposite direction. After scanning the first frame, the charged particle beam device starts the scanning of a second frame with the scan ending point contained within the first frame serving as the scan starting point.

The present invention has for its object to provide a charged particle beam irradiation method and a charged particle beam apparatus which can suppress unevenness of electrification even when a plurality of different kinds of materials are contained in a pre-dosing area or degrees of density of patterns inside the pre-dosing area differs with positions. To accomplish the above object, a charged particle beam irradiation method and a charged particle beam apparatus are provided according to which the pre-dosing area is divided into a plurality of divisional areas and electrifications are deposited to the plural divisional areas by using a beam under different beam irradiation conditions. With the above construction, the electrifications can be deposited to the pre-dosing area on the basis of such an irradiation condition that the differences in electrification at individual positions inside the pre-dosing area can be suppressed and consequently, an influence an electric field has upon the charged particle beam and electrons given off from the sample can be suppressed.

Electron beam irradiation method and scanning electron microscope

An objective of the present invention is to provide a charged particle beam device with which information based on a charged particle which is discharged from a bottom part of high-aspect structure is revealed more than with previous technology. To achieve the objective, proposed is a charged particle beam device comprising: a first orthogonal electromagnetic field generator which deflects charged particles which are discharged from a material; a second orthogonal electromagnetic field generator which further deflects the charged particles which are deflected by the first orthogonal electromagnetic field generator; an aperture forming member having a charged particle beam pass-through aperture; and a third orthogonal electromagnetic field generator which deflects the charged particles which have passed through the aperture forming member.

An object of the present invention is to provide a method and an apparatus capable of measuring a potential of a sample surface by using a charged particle beam, or of detecting a compensation value of a variation in an apparatus condition which changes due to sample charging, by measuring a sample potential caused by irradiation with the charged particle beam. In order to achieve the object, a method and an apparatus are provided in which charged particle beams ((),()) emitted from a sample () are deflected by a charged particle deflector () in a state in which the sample () is irradiated with a charged particle beam (), and information regarding a sample potential is detected by using a signal obtained at that time.

It is an object of the present invention to provide a scanning electron microscope for discriminating an angle of an electron ejected from a sample without providing an opening for restricting the angle at outside of an axis. In order to achieve the object described above, there is proposed a scanning electron microscope which includes a deflector to deflect an irradiating position of an electron beam, and a control unit to control the deflector, and further includes a detector to detecting an electron provided by irradiating a sample with the electron beam, an opening configuring member arranged between the detector and the deflector and having an opening for passing the electron beam, and a secondary signal deflector to deflect an electron ejected from the sample, in which the secondary signal deflector is controlled to deflect the electron ejected from the sample toward an opening of passing the electron beam in accordance with a deflection control of the deflector.

Scanning electron microscope

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Hachioji, Japan

Minoru Yamazaki