Nichia Corporation

Laser Systems Inc.

Hamamatsu-photonics K.k.

Imra America, Inc.

Minoru Yamamoto

Hiroaki Tamemoto

Naoto Inoue

Ryota Taoka

Masayuki Ibaraki

Ryota Sugio

Sho Kusaka

Hiroki Okamoto

Yoshitaka Hotta

Hideyuki Ohtake

Satoshi Okumura

Yuichi Asakawa

Yasuyuki Tsuboi

Yusuke Sekimoto

Tominori Nakamura

Ryota Takao

Hiroshi Yaguchi

A method for producing a resin part includes: preparing an intermediate body comprising a first member and a second member, the first member containing a resin; and welding the first member with the second member by performing scanning of the intermediate body with a first laser beam and a second laser beam. In the welding of the first member with the second member, the scanning with the first laser beam and the second laser beam is performed in a state in which a center of a second spot is located on a rear side in a direction of the scanning with the first laser beam and the second laser beam as compared to a center of a first spot while at least a part of the first spot and at least a part of the second spot overlap with each other.

Method for producing resin part

This laser processing apparatus is for forming modified regions in an object, which includes a sapphire substrate having a C-plane as a main surface, along cutting lines by focusing laser light on the object, and is provided with a laser light source, a spatial light modulator, and a focusing optical system. The spatial light modulator performs aberration correction by a first aberration correction amount smaller than an ideal aberration correction amount when the modified region is formed along a first cutting line along an a-axis direction of the sapphire substrate, and performs aberration correction by a second aberration correction amount smaller than the ideal aberration correction amount and different from the first aberration correction amount when the modified region is formed along a second cutting line along an m-axis direction of the sapphire substrate.

Laser processing device, and method for manufacturing chip

A method for processing a resin member includes: irradiating a first member comprising a resin with first light of a first wavelength that causes electronic excitation of the resin; and irradiating the resin electronically excited through irradiation with the first light with second light of a second wavelength longer than the first wavelength. A wavelength range of the second wavelength is within a wavelength range in which light absorption of the resin increases through electronic excitation of the resin.

Resin member machining method, resin member machining apparatus, and resin component manufacturing method

A method of manufacturing a light emitting element according to certain embodiments of the present disclosure includes: scanning and irradiating a first laser light having a first irradiation intensity to a sapphire substrate along predetermined dividing lines collectively in a shape of a tessellation of a plurality of hexagonal shapes in a top view to create a plurality of first modified regions along the predetermined dividing lines; and scanning and irradiating a second laser light having a second irradiation intensity greater than the first irradiation intensity to the sapphire substrate along the predetermined dividing lines to create a plurality of second modified regions overlapping the plurality of first modified regions.

Method of cutting a substrate along dividing lines

A method of manufacturing light emitting elements includes: providing a wafer including a substrate formed of sapphire and having a first main surface and a second main surface, and a semiconductor layered body disposed on the first main surface of the substrate; irradiating a laser beam into the substrate to form a modified region inside the substrate, the modified region having a crack reaching the first main surface and a crack reaching the second main surface; irradiating COlaser to a region of the substrate overlapping with a region to which the laser beam has been irradiated; and cleaving the wafer along the modified region to obtain the light emitting elements each having a hexagonal shape in a plan view.

Method of manufacturing light emitting element

A method includes preparing a wafer including a substrate and a semiconductor structure, and irradiating an inner portion of the substrate at a predetermined depth in a thickness direction a plurality of times with laser pulses at a first time interval and a predetermined distance interval between irradiations. Each irradiation performed at the first time intervals in the step of irradiating the substrate with laser pulses includes irradiating the substrate at a first focal position in the thickness direction with a first laser pulse having a first pulse-energy; and after irradiating with the first laser pulse, irradiating the substrate with a second laser pulse performed after a second time interval, the second time interval being shorter than the first time interval and being in a range of 3 ps to 900 ps, and the second laser pulse having a second pulse-energy 0.5 to 1.5 times the first pulse-energy.

Method for producing semiconductor light emitting element

A method of manufacturing a semiconductor element includes: providing a wafer having a semiconductor layered body on a sapphire substrate; irradiating a laser light in an interior region of the sapphire substrate to create cracks in the sapphire substrate by performing a first scan to irradiate the laser light at a first depth with a first pulse energy to create a first modified region, and a second scan following the first scan to irradiate the laser light at a second depth with a second pulse energy greater than the first pulse energy along and within the first modified region; and dividing the wafer by extending the cracks to obtain a semiconductor element.

Method of manufacturing semiconductor element

Growing community of inventors

Anan, Japan

Minoru Yamamoto