Kabushiki Kaisha Toshiba

Asahi Glass Company, Limited

Ishikawajima-harima Heavy Industries Co., Ltd.

Ishikawajima-harima Jukogyo Kabushiki Kaisha

Minoru Yamada

Masaru Koyanagi

Hirotsugu Yamamoto

Hiroshi Hatano

Toshihiko Higuchi

Takao Doi

Kazuyoshi Muraoka

Takashi Watabe

Toru Ueno

Kazunori Chiba

Akio Tejima

Shinya Saiki

Etsuko Sakai

Yasuhiko Endo

Noriyuki Oda

Akira Nemoto

Akira Yamaoka

Masayuki Watando

Ichiro Ohta

Kouzi Ishiwata

Hiroshi Yugami

A TIG welding apparatus comprises; a twin electrode type welding torchhaving a first and a second welding electrodearranged approximately parallel and either side of an insulation plate of a predetermined thickness, and a main unitwhich supplies to the first welding electrodea first welding current varied at a first period F, and to the second welding electrodea second welding current varied at the first period F and at an opposite phase to the variation of the first welding current. The main unitsuperimposes a variation of a second period fm being shorter than the first period F, onto the first and second welding currents. As a result, the arc current is increased without increasing the welding current.

Tig welding apparatus and method

A process for purifying a polyether, which comprises adding to a polyether (A) containing a first salt, water (B) and a compound (C) which is capable of reacting with an ion constituting the first salt to form a second salt which is essentially insoluble in the polyether (A), then removing water, followed by removing the second salt from the polyether (A).

Process for purifying a polyether

A method for operating a filtration apparatus for flue gas, which removes dust from flue gas discharged from a burner using mainly solid fuel, wherein incombustible powder is introduced into the filtration apparatus upon detecting or foreseeing coming of unburnt combustible dust from the burner, or upon detecting or foreseeing a temperature rise of the flue gas, and the incombustible powder is suspended in the dust-containing flue gas to suppress combustion of the combustible dust, or to suppress the temperature rise of the flue gas, in the filtration apparatus.

Method for operating a filtration apparatus for flue gas

In the semiconductor device according to the present invention, bonding pads are arranged on the periphery of the semiconductor chip and power supply inner leads are disposed inwardly of signal inner leads. Since bonding wires for connecting the signal lead to signal pads corresponding thereto do not extend astride of the power supply inner lead, a package of a semiconductor device can be thereby thinned as much as possible.

Semiconductor device

A heat exchange apparatus is composed of a plurality of tube banks arranged in rows each comprising a plurality of tubes arranged in a direction normal to a gas flow in a gas passage duct and in the heat exchanger, an interval of a space between mutually adjoining tube banks in the gas flow direction is less than eight times of a depth of a tube group disposed on an upstream side with respect to the gas flow and baffle plates are disposed in the respective tube banks for preventing a multibank tubing compound resonance. Each of the baffle plates disposed in an upstream side tube bank has an extension extending from a center of a most downstream side tube in the upstream side tube bank and having a length more than two times of a tube pitch in the gas flow direction, and each of the baffle plates disposed in a downstream side tube bank has an extension extending from a center of a most upstream side tube in the downstream side tube bank and having a length more than two times of a tube pitch in the gas flow direction.

Heat exchange apparatus

An improved semiconductor memory having a plurality of sense amplifier circuits corresponding to each bit line of a plurality of columns. A first common line is connected in common to the sense amplifier circuits, and a second common line is connected to the first common line. A first switching element is connected between the second common line and a reference voltage potential terminal, and a second switching element is connected to the first common line and the reference voltage potential. The second switching element corresponding to the first common line connected to one of the sense amplifier circuits is made conductive in response to a selection of the sense amplifier is disclosed.

Semiconductor memory having a plurality of sense amplifier circuits and

A semiconductor integrated circuit for controlling the substrate potential is disclosed, in which a substrate potential generating circuit is connected to a substrate and can be operated on at least a certain operation voltage level to generate the substrate potential. A detection circuit outputs a first detection signal upon detecting that the substrate potential has become lower than the operation voltage level by more than a preset amount, and outputs a second signal upon detecting that the substrate potential has reached a preset level which is slightly lower than the operation voltage level. A charging circuit charges the substrate upon receiving the first detection signal and interrupts the operation of charging the substrate upon receiving the second detection signal.

Semiconductor integrated circuit having substrate potential detecting

In a TIG welding process with controlled welding current pulses, DC current pulses with the frequency set at from tens to hundreds Hz (most preferably from 30 to 300 Hz) are fed to an electrode and current pulses are also fed to a filler wire so that an arc is caused to swing, whereby a large pool of molten metal can be maintained in a positive and stable manner due to the high arc pressure obtained when the welding current pulses at from tens to hundreds Hz is used.

All position TIG welding process

Growing community of inventors

Yokohama, Japan

Minoru Yamada