Kabushiki Kaisha Toshiba

Taisho Pharmaceutical Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Ricoh Company, Ltd.

Harada Industry Co., Ltd.

Minoru Taguchi

Koichi Kanzaki

Kazuo Kihara

Kazuyuki Tomisawa

Kaoru Sota

Tomomi Ota

Gen Sasaki

Misa Nakanishi

Ryo Suzuki

Yoshiaki Watanabe

Akihiko Furukawa

Minoru Matsuo

Katsuo Hatayama

Hiroshi Fukushima

Hiroshi Mochizuki

Chihiro Yokoo

Akira Onodera

Masami Goi

Mitsuo Murata

Morihiro Mitsukuchi

Ayako Mikami

Izumi Aibe

Tomoyuki Ikemoto

A 4,5-dihydronaphtho[1,2-b]thiophene derivative expressed by the formula: (wherein Ris a Cto C1-hydroxyalkyl group or a Cto Cacyl group, and Rand Rseparately substitute in the 6-, 7-, 8-, or 9-positions, and are each independently a hydrogen atom, a halogen atom, a Cto Calkyl group, a hydroxy group, a Cto Calkoxy group, a Cto Calkenyloxy group, a Cto Calkynyloxy group, a benzyloxy group, or the like, provided that when Ris an acyl group and Ris a hydrogen atom, then Ris neither a hydrogen atom nor an acetyl group), or a pharmaceutically acceptable salt thereof This is a novel compound that is effective in reducing triglyceride levels in the liver and reducing blood glucose levels.

4,5-dihydronaphtho[1,2-b]thiophene derivative

2-Phenoxyaniline derivatives

2-phenoxyaniline derivatives

An integrated circuit comprises a charge coupled device and an MOS transistor. The charge coupled device has a lower and an upper gate electrode on the substrate. The insulating film between the substrate and the electrodes comprises silicon nitride. The insulating film between the electrodes is formed by thermal oxidizing the lower gate electrode using the silicon nitride film as a mask.

Method of manufacturing an integrated circuit having a charge coupled

A heterojunction type of compound semiconductor integrated circuit in which a PNP transistor has an N type substrate made of a first compound semiconductor for mounting the PNP transistor and for insulating positive holes transmitted in the PNP transistor, a P type second compound semiconductor limitedly arranged on a part of the substrate for functioning as an emitter of the PNP transistor, an N type third compound semiconductor arranged on both the second compound semiconductor and the substrate for functioning as a base of the PNP transistor, electrons being applied from the substrate to the third compound semiconductor, a P type fourth compound semiconductor limitedly arranged on a part of the N type third compound semiconductor, a P.sup.+ type fifth compound semiconductor arranged on the part of the fourth compound semiconductor for functioning as a collector contact layer of the PNP transistor, an emitter contact layer limitedly arranged on a second part of the second compound semiconductor for supplying positive holes to the second compound semiconductor, the surface of the emitter contact layer being the same height as that of the fifth compound semiconductor so as to form a flat surface, and an isolation region sandwiched between the emitter contact layer and the fifth compound semiconductor for electrically isolating the emitter contact layer from both the second P.sup.+ type fifth compound semiconductor and the fourth compound semiconductor.

Heterojunction type of compound semiconductor integrated circuit

Integrated circuit having a charge coupled device and MOS transistor and

In a semiconductor device, a charge transfer device, a bipolar transistor, and a MOSFET are formed on a single chip, and the peripheral portion of the charge transfer device is surrounded by an N.sup.+ -type region. Since the charge transfer device block is surrounded by the N.sup.+ -type region and the N.sup.+ -type buried layer, leaked charge of clocks from the charge transfer device is absorbed by the N.sup.+ -type region and the N.sup.+ -type buried layer.

Semiconductor device having CCD and its peripheral bipolar transistors

Disclosed herein is an electrophotographic photoreceptor comprising a charge generation layer and a charge transport layer disposed in lamination on a substrate, in which at least one of said charge generation layer and said charge transport layer is a vacuum vapor deposition film containing a binding polymer.

Electrophotographic photoreceptor and method of manufacturing comprising

A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor substrate, an isolation layer of the first conductivity type formed in the epitaxial layer and extending from a surface thereof to the major surface of the semiconductor substrate. The isolation layer divides the epitaxial layer into first, second, and third islands. The device further has two wells of the first conductivity type, formed in the first and second islands, respectively, and extending to the substrate, a charge transfer device having a back gate formed of the first well, an insulated-gate FET of the first conductivity type, having a back gate formed of the second island, an insulated-gate FET of the second conductivity type, having a back gate formed of the second well, and a bipolar transistor having a collector formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and thus blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.

Method of making a semiconductor device having a charge transfer device,

A semiconductor device, comprises a semiconductor substrate, a digital element part as a pair of MOS transistors formed on the semiconductor substrate; and an analog element part as a pair of MOS transistors formed on the semiconductor substrate, wherein a gate insulator film of the analogue element part comprises at least a first silicon oxide film and a silicon nitride film, a gate insulator film of the digital element part comprises a second silicon oxide, and the gate insulation film of the analogue element part is thicker than the gate insulation film of the digital element part. A fabrication method of the semiconductor device also is described.

Semiconductor device comprising an analogue element and a digital element

A semiconductor device according to the present invention has a semiconductor body of a first conductivity type, three islands of a second conductivity type, formed in the surface of the semiconductor body. Two wells of the first conductivity are formed in the first and second islands. The device further has a charge transfer device which back gate is formed of the first well, an insulated-gate FET of the first conductivity type which back gate is formed of the second island, an insulated-gate FET of the second conductivity type which back gate is formed of the second well, and a bipolar transistor which collector is formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device, and blocks the noise generated in the first well. Hence, the other islands are free from the influence of the noise.

Device having a charge transfer device, MOSFETs, and bipolar transistors--a

Buried layers of a second conductivity type are formed in a plurality of portions of a surface region of a semiconductor substrate of a first conductivity type, and an epitaxial layer of the first conductivity type is formed on the buried layers and the semiconductor substrate. A plurality of well regions of the second conductivity type are formed in the epitaxial layer in contact with the buried layers, and a region of the second conductivity type with a high impurity concentration is formed in one of the well regions in contact with the buried layers. A field insulating layer is formed on a surface region of the semiconductor substrate between the well regions. An impurity is ion-implanted in a portion substantially immediately below the field insulating film a plurality of times to form inversion preventing layers of the first conductivity type having a plurality of impurity concentration peaks. Active elements are formed in the epitaxial layer of the first conductivity type and the well regions.

Semiconductor device including inversion preventing layers having a

For providing a semiconductor integrated circuit device including CCD type, bipolar type and MOS type integrated circuits in only one chip, island-shaped epitaxial layers of opposite conductivity type are disposed in a semiconductor substrate of one conductivity type having a low impurity concentration. A field oxide layer is provided so as to surround a periphery of an exposed surface of each epitaxial layer. A buried layer of opposite conductivity type having a high impurity concentration is is interposed between the semiconductor substrate and each epitaxial layer in such a manner that at least one edge thereof terminates to the lower surfaace of the field oxide layer. The CCD type integrated circuit is provided in the semiconductor substrate, and the bipolar type and MOS type integrated circuits are arranged in the epitaxial layers.

Semiconductor integrated circuit and method of making the same

A semiconductor device having a semiconductor substrate of a first conductivity type, an epitaxial layer of a second conductivity type formed on a major surface of the semiconductor subtrate, an isolation layer of the first conductivity type formed in the epitaxial layer and extending from a surface thereof to the major surface of the semiconductor substrate. The isolation layer divides the epitaxial layer into first, second, and third islands. The device further has two wells of the first conductivity type, formed in the first and second islands, respectively, and extending to the substrate, a charge transfer device having a back gate formed of the first well, an insulated-gate FET of the first conductivity type, having a back gate formed of the second island, an insulated-gate FET of the second conductivity type, having a back gate formed of the second well, and a bipolar transistor having a collector formed of the third island. The first island surrounds the first well which serves as back gate of the charge transfer device,and thus blocks noise generated in the first well. Hence, the other islands are free from the influence of the noise.

Semiconductor device having a charge transfer device, MOSFETs, and

An automobile antenna of a rod shape comprises an antenna element and a hollow cylindrical member of a resin fitted on the circumference of the antenna element. The hollow cylindrical member includes a plurality of hollow cylindrical units that may be coupled together or may be spaced apart. The cylindrical member has a ridge or ridges in the form of a spiral or ring. The ridge functions to generate a turbulent flow of air when the automobile runs at a high speed, so that a whistling sound generated by the wind blow may be eliminated. The method of making an antenna uses two offset molds having a plurality of cavities by the provision of spaced apart partitions, which also support the antenna element. A molding material is supplied into the cavities so that the ridges-bearing cylindrical member and the antenna element may be fabricated as one unit. Portions of the antenna element supported by the partitions, after molding operation, are exposed externally to attain an improved whistling sound elimination function.

Growing community of inventors

Oomiya, Japan

Minoru Taguchi