Tdk Corporation

Minoru Sanuki

Yohei Shiokawa

Tomoyuki Sasaki

Tomomi Kawano

Tatsuo Shibata

Minoru Ota

Kosuke Hamanaka

This magnetization rotational element includes a spin-orbit torque wiring, and a first ferromagnetic layer in contact with the spin-orbit torque wiring, in which the spin-orbit torque wiring includes a first layer, a second layer, and a third layer in order from a side closer to the first ferromagnetic layer, and a coefficient of linear expansion of a material forming the second layer is between a coefficient of linear expansion of a material forming the first layer and a coefficient of linear expansion of a material forming the third layer.

Magnetization rotational element, magnetoresistive effect element, and magnetic memory

This spin current magnetization rotational element includes a first ferromagnetic metal layer for a magnetization direction to be changed, and a spin-orbit torque wiring extending in a second direction intersecting a first direction which is an orthogonal direction to a surface of the first ferromagnetic metal layer and configured to be joined to the first ferromagnetic metal layer, wherein the spin-orbit torque wiring has a structure in which a spin conduction layer joined to the first ferromagnetic metal layer and a spin generation layer joined to the spin conduction layer on a surface on a side opposite to the first ferromagnetic metal layer are laminated.

Spin-current magnetization reversal element, magnetoresistance effect element, and magnetic memory

A magnetic domain wall moving element according to an embodiment includes: a magnetic recording layer, a ferromagnetic layer, and a non-magnetic layer arranged between the magnetic recording layer and the ferromagnetic layer, wherein the ferromagnetic layer contains an additive element dispersed therein, and the additive element is one or more of H, He, Ne, Ar, Kr, Xe, N, C, Ag, Cu, Hg, Au, Pb, Zn, and Bi.

Magnetic domain wall moving element and magnetic array

A spin-orbit-torque magnetization rotational element and a spin-orbit-torque magnetoresistance effect element capable of easily rotating or reversing magnetization of a ferromagnetic layer. The spin-orbit-torque magnetization rotational element includes spin-orbit-torque wiring and a first ferromagnetic layer laminated on the spin-orbit-torque wiring in a first direction, wherein the spin-orbit-torque wiring includes a first region extending in a second direction, a second region extending in a third direction different from the second direction, and an intersection region where the first region and the second region intersect, and wherein the first ferromagnetic layer and the intersection region at least partially overlap in a plan view from the first direction.

Growing community of inventors

Tokyo, Japan

Minoru Sanuki