Panasonic Corporation

Minoru Sanada

Terutsugu Segawa

Yoshirou Nakata

A temperature regulation plateis divided into at least two areas, a heaterfor applying a temperature load in correspondence with such areas and its control system are divided and controlled independently to set temperatures, and a cooling source is controlled by comparing the measurements from temperature sensorsarranged in respective areas for controlling the heaterand switching the measurement for calculating the control output sequentially thus reducing variation in in-plane temperature of a wafer due to heating when an electric load is applied. Since consumption and burning of a probe are prevented, highly reliable wafer level burn-in method and apparatus can be provided.

Method and apparatus for wafer level burn-in

Provided is a probe card for semiconductor IC test on one principal surface of which are formed a plurality of probe electrodes, such as bump electrodes (), and which has, in a peripheral portion thereof, a thin film sheet () fixed to a support, such as a ceramics ring (). A local tension-changed portion () is formed in the thin film sheet () fixed to the ceramics ring () so that a tensile strain is generated, and the plurality of bump electrodes () are arranged in prescribed positions that connect electrically to electrodes of each semiconductor IC element of the semiconductor wafer. The tensile strain of the thin film sheet () is changed positively and in a sustained manner, whereby the bump electrodes () are rearranged in desired positions.

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Osaka, Japan

Minoru Sanada