Tdk Corporation

Minoru Ota

Takahiko Machita

Hideyuki Ukita

Tomoyuki Sasaki

Kei Hirata

Kenzo Makino

Tatsuo Shibata

Takekazu Yamane

Kenkichi Anagawa

Naomichi Degawa

Kenta Hamamoto

Yohei Shiokawa

Satoshi Miura

Yoshitomo Tanaka

Hisayoshi Watanabe

Takumi Yanagisawa

Tetsuya Hiraki

Shohei Kawasaki

Hirokazu Takahashi

Atsushi Yamaguchi

Takeo Kagami

Takayasu Kanaya

Katsuki Kurihara

Kohei Honma

Hidekazu Kojima

Masaya Kato

Shogo Yamada

Minoru Sanuki

A magnetoresistance effect element includes a magnetic recording layer which includes a ferromagnetic material, a non-magnetic layer laminated on the magnetic recording layer, and a magnetization reference layer which is laminated on the non-magnetic layer. The magnetic recording layer includes a first ferromagnetic layer, a spacer layer, and a second ferromagnetic layer in order from the non-magnetic layer. The first ferromagnetic layer and the second ferromagnetic layer are antiferromagnetically coupled to each other. The magnetic recording layer has a central region in which a product of a film thickness and saturation magnetization of the first ferromagnetic layer is greater than a product of a film thickness and saturation magnetization of the second ferromagnetic layer, and an outer region in which the product of the film thickness and the saturation magnetization of the first ferromagnetic layer is smaller than the product of the film thickness and the saturation magnetization of the second ferromagnetic layer.

Magnetoresistance effect element and magnetic recording array

A magnetic recording layer according to this embodiment has a magnetic domain wall inside and contains a rare gas element.

Magnetic recording layer, magnetic domain wall moving element and magnetic recording array

A magnetic domain wall moving element according to an embodiment includes: a magnetic recording layer, a ferromagnetic layer, and a non-magnetic layer arranged between the magnetic recording layer and the ferromagnetic layer, wherein the ferromagnetic layer contains an additive element dispersed therein, and the additive element is one or more of H, He, Ne, Ar, Kr, Xe, N, C, Ag, Cu, Hg, Au, Pb, Zn, and Bi.

Magnetic domain wall moving element and magnetic array

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.

Magnetoresistive effect element and magnetic memory

A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization fixed layer includes a first fixed layer and a second fixed layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first fixed layer and the second fixed layer. The first fixed layer and the second fixed layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first fixed layer and the second fixed layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Cr, Mn, Fe, Co and Ni.

The present disclosure is directed to a spin current magnetization rotational element, a spin-orbit-torque magnetoresistance effect element, a magnetic memory, and a high-frequency magnetic element which can efficiently generate a pure spin current and reduce a reversal current density. The spin current magnetization rotational element includes: a spin-orbit torque wiring extending in a first direction; and a first ferromagnetic layer laminated in a second direction which intersects the first direction, wherein the spin-orbit torque wiring includes at least one rare gas element of Ar, Kr, and Xe.

Spin current magnetization rotational element, spin-orbit-torque magnetoresistance effect element, magnetic memory, and high-frequency magnetic element

A multi reader head has a plurality of readers that are laminated via a gap layer(s), and each of the readers has a structure in which a current-perpendicular-to-plane (CPP) type of magneto-resistive effect element, where a current flows along the lamination direction, is interposed between a pair of shields that function as an electrode, respectively, from both sides in the lamination direction. The shields that are opposed from each other via the gap layer of the readers that are adjacent in the lamination direction by a distance that is not constant, but include a portion with a greater distance between the shields and another portion with a smaller distance between the shields are included. The portion with a greater distance between the shields is situated at a position away from the center on an air bearing surface opposing to a recording medium in the magneto-resistive effect element.

Multi reader head having a varying gap layer laminated between readers

A magnetic head includes a magneto-resistance effect element in the form of a multilayer film, a pair of shields between which the magneto-resistance effect element is interposed in the lamination direction of the layers of the magneto-resistance effect element and each functioning as an electrode, a pair of side shields with one of said side shields on each side of the magneto-resistance effect element in the direction perpendicular to the lamination direction of the magneto-resistance effect element interposed between the pair of shields, the side shields magnetically coupled to either of the pair of shields, and an anisotropy-application layer disposed adjacent to the shield magnetically coupled to the pair of side shields. The pair of shields, the magneto-resistance effect element, and the pair of side shields are exposed on the air bearing surface facing a recording medium. The anisotropy-application layer is not exposed on the air bearing surface and is provided at a position away from the air bearing surface.

Magnetic head comprising magneto-resistance effect element and side shields

A TMR element includes a stack having a sidewall, and an insulating layer in contact with the sidewall. The stack includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer located between the first and second ferromagnetic layers. The insulating layer includes an island-like structure section in contact with only a part of the sidewall, and a coating section covering the island-like structure section and the sidewall. The tunnel barrier layer contains a first oxide. The island-like structure section contains a second oxide. Each of the first and second oxides is a metal oxide or semiconductor oxide. G2&#x2212;G1 is 435 kJ/mol or smaller, where G1 and G2 are standard Gibbs energies of formation at 280&#xb0; C. of the first oxide and the second oxide, respectively.

Magnetoresistance element including a stack having a sidewall, and an insulating layer in contact with the sidewall

A magnetoresistive effect element that prevents a recording medium from deteriorating by effectively inhibiting erroneous writing to a medium or the like includes a magnetoresistive effect part, and an upper shield layer and a lower shield layer that are laminated and formed in a manner sandwiching the magnetoresistive effect part from above and below, and is in a current perpendicular to plane (CPP) structure in which a sense current is applied in a lamination direction. The magnetoresistive effect part includes a nonmagnetic intermediate layer, and a first ferromagnetic layer and a second ferromagnetic layer that sandwich the nonmagnetic intermediate layer from above and below, the upper shield layer and the lower shield layer have inclined magnetization structures in which magnetizations of them are respectively inclined with respect to a track width direction, the magnetizations of the upper shield layer and the lower shield layer are mutually substantially orthogonal, the first ferromagnetic layer is indirectly magnetically coupled with the upper shield layer via a first exchange coupling function gap layer that is positioned between the first ferromagnetic layer and the upper shield layer, and the second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via a second exchange coupling function gap layer that is positioned between the second ferromagnetic layer and the lower shield layer.

CPP-type magnetoresistance effect element and magnetic disk device

An MR element includes an MR part and upper and lower shield layers in a CPP structure. The MR element has side shield layers so as to interpose the MR part between the side shield layers in a track width direction. The MR part comprises a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer between the ferromagnetic layers. Each of the upper and lower shield layers has an inclined magnetization structure such that its magnetization is inclined relative to the track width direction. The side shield layers are magnetically coupled with the upper shield layer, respectively. The second ferromagnetic layer is indirectly magnetically coupled with the lower shield layer via an exchange-coupling functional gap layer. The side shield layer applies a bias magnetic field to the first ferromagnetic layer; and magnetizations of the first and second ferromagnetic layers are substantially orthogonal.

CPP-type magnetoresistance effect element and magnetic disk device using side shield layers

An MR element suppressing a false writing into a medium with an MR part has a CPP structure. The MR part includes a nonmagnetic intermediate layer and first and second ferromagnetic layers so as to interpose the nonmagnetic intermediate layer. First and second shield layers respectively have an inclining magnetization structure of which a magnetization is inclined with regard to a track width direction. The first and second ferromagnetic layers are respectively, magnetically coupled with the first and second shield layers. A magnetization direction adjustment layer for adjusting at least a magnetization direction of the first ferromagnetic layer is positioned at a rear end surface side of the first ferromagnetic layer, which is opposite to a front end surface receiving a magnetic field detected in the MR part.

CPP-type magnetoresistive element including a rear bias structure and lower shields with inclined magnetizations

A main magnetic-pole layer is provided with, at the tip end portion thereof, a trailing shied on the trailing side via a non-magnetic gap layer, and the non-magnetic gap layer includes therein one or more magnetic layers. This magnetic layer appropriately controls the amount of magnetic fluxes coming from the tip end portion of the main magnetic-pole layer for capturing into the trailing shield because the magnetic fluxes coming from the tip end portion of the main magnetic-pole layer go through the magnetic layer before being captured into the trailing shield.

Perpendicular magnetic write head and magnetic recording device

A magnetic head includes a main magnetic pole layer and a yoke layer. The main magnetic pole layer generates a magnetic flux of a recording magnetic field and includes a magnetic pole front part and a magnetic pole rear part. The yoke layer is disposed at the magnetic pole rear part and includes a yoke front part and a yoke rear part. The magnetic pole front part extends on a magnetic medium-facing surface side of the magnetic pole rear part with a width in a track width direction being smaller than that of the magnetic pole rear part. The yoke front part extends on the magnetic medium-facing surface side of the yoke rear part with a width in the track width direction being larger than that of the magnetic pole rear part and that of the yoke rear part.

Magnetic head, head assembly, and magnetic recording/reproducing apparatus to reduce risk of wide area track erase

A perpendicular magnetic write head is provided with a magnetic pole and a pair of side shields disposed on both sides of the magnetic pole in a cross track direction with side gaps in between. Each of the pair of side shields is configured in such a manner that a saturation magnetic flux density thereof increases as a distance from the magnetic pole in the cross track direction increases. Such a configuration allows unwanted divergence component of magnetic flux in a recording magnetic field to be captured while avoiding any excessive capturing of the recording magnetic field, and while preventing any intensity reduction of the recording magnetic field in its entirety. As a result, the recording magnetic field is maintained to have an adequate intensity and spreading of the recording magnetic field is suppressed, so that the recording capabilities are improved.

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Tokyo, Japan

Minoru Ota