Tokyo Electric Co.

Minoru Ogawa

Koichiro Sakamoto

Toshiyuki Tamura

Kazushige Katsuumi

A method for manufacturing edge emission type EL device arrays is disclosed. The method initially involves depositing a first and a second lower electrode layer of different properties. The second lower electrode layer is patterned into a common electrode arrangement conductive to a plurality of edge emission type EL devices. On top of the first and second lower electrode layers, an EL device layer and an upper electrode layer are deposited. The first lower electrode layer is patterned together with the EL device layer and upper electrode layer into a plurality of edge emission type EL devices. The parts ranging from the top edge of the light-emitting edges for the EL devices to the inside of the substrate are etched. This provides a highly smooth light-emitting edge for each EL device.

Method for manufacturing edge emission type electroluminescent device

The present invention, in a photoelectric conversion device including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, is manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.

Method of making a photoelectric conversion device

An image sensor including a sensor portion and a thin film transistor portion for the purpose of switching disposed on the same substrate, manufactured by, first, forming gate electrodes for a thin film transistor portion on the surface of the substrate by a thin film technique, and then, depositing an insulating film, an a-Si film, and electrodes on the insulating substrate so as to be laminated to one after another and commonly covering the sensor portion and the thin film transistor portion, whereby the sensor portion and the thin film transistor portion are enabled to be provided in one series of processing while the device is put in a vacuum chamber.

Photoelectric conversion device

A photoelectric conversion device is disclosed which comprises a large number of photoelectric conversion elements arranged in an array on a substrate and thin film transistors individually corresponding to the photoelectric conversion elements and arranged in an array in parallel with the direction of the array of the photoelectric conversion elements, in which two electrodes of each of the thin film transistors are arranged to oppose each other in the direction of the array of the photoelectric conversion elements so that the width of the channel formed between both the electrodes may be prolonged, and thereby, switching operation by the thin film transistor is made reliable and the manufacture of the thin film transistor portion is facilitated.

Growing community of inventors

Shizuoka, Japan

Minoru Ogawa