Nippon Soken, Inc.

Nippondenso Co., Ltd.

Toyota Jidosha Kogyo Kabushiki Kaisha

Toyota Jidosha Kabushiki Kaisha

Nippondenso Soken, Inc.

Minoru Nishida

Tadashi Hattori

Hiroaki Yamaguchi

Daisaku Sawada

Kenji Goto

Takashi Shigematu

Yoshiki Ueno

Naohito Mizuno

Toru Mizuno

Shinichi Mukainakano

Tukasa Goto

Akira Tanaka

Tokio Kohama

Hideki Obayashi

Minoru Ohta

Takamichi Nakase

Seizi Huzino

Yuji Takeda

Teruyoshi Ito

Masakazu Terada

Yoshiyasu Ando

Shinsuke Watanabe

Minekazu Sakai

Muneaki Matsumoto

Shigeyuki Akita

Tsuyoshi Fukada

Tadashi Ozaki

Koji Numata

Yoshinori Ohtsuka

Kinya Atsumi

Mitsuhiko Masegi

Kunimasa Yoshimura

Novuei Ito

Hiroshi Uesugi

Kenji Kondo

Kunio Makita

Masaaki Kurii

Yosiyasu Ando

Takanori Yanagisawa

Youiti Kotanishi

Tetsuzo Muraki

Takashi Shigemaut

A method of producing a semiconductor dynamic sensor which features an improved sensitivity yet having a small size while avoiding damage to the thin distortion-producing portion. A resist film 49 is photo-patterned on the front main surface of the semiconductor substrate 41 except for the region where the upper isolation grooves are to be formed prior to forming the lower isolation groove 10 by the first etching of the back main surface of the semiconductor substrate 41 (which includes the epitaxial layer 42). Unlike the prior art, therefore, there is no need to spin-coat the front main surface of the semiconductor substrate 41 with the resist film 49 which is followed by photo-patterning after a predetermined region of the semiconductor substrate 41 has been reduced in thickness by the first etching. Therefore, damage therefore to the thin portion by the vacuum chucking the wafer during the spin-coating of the resist film is avoided.

Method of producing a semiconductor dynamic sensor

This invention relates to a method of producing an acceleration sensor of a semiconductor. Piezo resistance layers are formed in a silicon tip 2 of a single crystal etched in an anisotropic etching liquid such as a KOH solution, etc., using as a mask a silicon nitride film. Then the silicon tip 2 of the single crystal is soaked in an isotropic etching liquid for a predetermined time and is etched to a depth of 0.5-2.0 .mu.m. Further, a photoresist is applied over a whole surface thereof to form a slot extending to a hollow.

Method of producing an acceleration sensor of a semiconductor

A device for detecting pressure of a high temperature pressurized fluid. A sensing element having a diaphragm adjacent to one end and a lead wire outlet adjacent to another end in the longitudinal direction of a rectangular parallelopiped configuration of the sensing element including the diaphragm. Thus, the lead wire outlet is a predetermined distance from the diaphragm heated by high temperature fluid. This prevents the lead wire outlet and the other electrical assemblies from suffering deterioration or misoperation caused by high temperature. The reliability of the pressure detecting device can be improved.

Pressure detecting device

A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure, which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

Semiconductor pressure sensor and method for bonding semiconductor chip

The pressure sensor has a housing, a sensing body mounted inside an internal space of the housing and having a cavity, one end thereof being open and other end thereof being closed, to form a pressure introducing portion therein, the closed end thereof having a thin thickness forming a diaphragm for receiving a pressure, and a semiconductor chip mounted on one surface of the closed end opposite to the diaphragm for receiving a pressure. The pressure sensor is characterized in that the sensing body is attenuated at a portion including at least the closed end thereof and has a diameter smaller than that of the remaining portion thereof, and a shoulder is provided therebetween, whereby the sensing body is fixedly connected to the internal space of said housing by abutting the shoulder thereof against a stopper portion provided in the internal space of the housing and the external surface thereof is placed in contact with the inner surface of the internal space of the housing. The pressure sensor having the above construction is highly sensitive and can accurately measure a pressure of a high pressure fluid, as the sensing body is firmly fixed to the inner surface of the housing and has a simple construction.

Pressure sensor

In an apparatus for controlling a headlight of a vehicle, a light from a preceding or oncoming vehicle can be detected without being disturbed by a light reflected on guardrails and the like, or light from a traffic signal, street lights and the like, and the illumination area of the headlight can be suitably adjusted without unnecessary switching of an illumination mode of the headlight. This control is carried out by receiving a light impinging on the front end of the vehicle by a light receiving member divided into a plurality of regions, by carrying out a comparison and discrimination between the light detection signals from the plurality of regions, and based on a result thereof, by selecting an appropriate illumination mode of the headlight.

Apparatus for controlling a headlight of a vehicle

A semiconductor pressure sensor having a cylindrical housing with an opening formed at its tip end which is exposed to a pressure atmosphere and a metal diaphragm for receiving pressure which is formed in a wall of the cylindrical housing defining the opening. A metal oxide layer is formed in a surface of the metal diaphragm by oxidizing the surface of the metal diaphragm, and a glass layer is formed on the metal oxide layer. A semiconductor chip, on which a strain gauge is formed, is firmly and surely bonded to the metal diaphragm through the glass layer by virtue of the metal oxide layer. This semiconductor pressure sensor can measure high pressure with sufficient sensitivity and high accuracy.

Semiconductor pressure sensor with method diaphragm

A pressure sensor includes a metal diaphragm provided at the end of a pressure introduction portion, a glass layer bonded to a surface of the metal diaphragm opposite to the pressure introduction side thereof, and a semiconductor chip acting as a semiconductor strain gauge bonded to the surface of the glass layer.

A small-sized spark plug for internal combustion engines is disclosed which is composed of a center electrode having a shaft portion surrounded by an insulator layer and a terminal end portion adapted to act as a spark generation portion; and an earthed electrode having a terminal end portion which is spaced apart from and is opposite to the terminal end portion of the center electrode so that a spark gap is defined along a surface of the insulator layer. The shortest distance .delta. (mm) between each end portion of the two electrodes and the surface of the insulation layer and the distance l between the forward end portions of the two electrodes have the following relationship:

Small-sized spark plug having a spark gap parallel to an axis running

A machine oil deterioration detection apparatus having a copper thin film resistor formed on an electrically insulating holding member and immersed in a machine oil. The copper thin film resistor is corroded by acid produced in accordance with deterioration of the machine oil, thus changing the resistance of the resistor. The change in resistance is detected by a detection circuit, connected to the thin film resistor, for detecting the resistance of the thin film resistor.

Machine oil deterioration detection

An ignition device for use with internal combustion engines is adapted for conducting a light beam into the combustion chamber of the engine to ignite a fuel-air mixture. The ignition device includes a light emission apparatus opened to the combustion chamber to emit a light beam into the chamber, and a particle supply apparatus disposed in opposed relation with the light emission apparatus for supplying into the combustion chamber particles of a high light absorption index separately from the fuel-air mixture. The particles from the particle supply apparatus are emitted along the optical axis of the light beam into the combustion chamber and are heated at a position suitable for ignition of the fuel-air mixture within the combustion chamber to serve as an ignition source.

Ignition system for engine

A spark plug having center and ground electrodes. One of the electrodes is covered with an insulator, a part of which includes outer and inner insulating layers. The outer insulating layer is formed of a heat-resistant and high voltage-resistant material. The inner insulating layer is formed of a material having a high dielectric constant and interposed between the outer insulating layer and the portion of the one electrode which is directed toward the other electrode.

Spark plug

A spark plug includes a body of dielectric substance mounted on one of central and earth electrodes and having polarization effects. A gap for capacitive discharge is defined between the body of dielectric substance and the other of the electrodes, and a gap for inductive discharge is defined between the electrodes, which gap for inductive discharge is larger in dimension than the gap for capacitive discharge. With the arrangement, capacitive discharge to be produced in the early stage of discharge is caused at low discharge breakdown voltage due to polarization effects of the body of dielectric substance, and inductive discharge taking the main part of discharge for ignition is produced by utilizing the capacitive discharge of low voltage as trigger, thereby lowering discharge breakdown voltage to improve ignition performance of the spark plug.

Spark plug having dual gaps

A spark plug with a wide discharge gap includes an insulating layer formed on one or the other of its center and ground electrodes and disposed in the gap between the electrodes. The insulating layer includes an inner insulating layer of a material having a high dielectric constant and an outer insulating layer of a material having an excellent resistance to heat and high voltage, which surrounds the inner insulating layer, whereby ensuring a reduced discharge voltage, an improved ignition performance and improved heat resistance and durability.

Spark plug with a wide discharge gap

An ignition apparatus for an internal combustion engine comprises an intake path supplying a mixture of air and fuel into the combustion chamber of the engine, a particle supplying unit having an ejection port opening into the combustion chamber for supplying minute particles of a material which is not the fuel and has a high light absorption factor, and a light source radiating a laser beam through a light focusing unit toward a suitably selected position in the internal space of the combustion chamber, so that the laser beam can strike the minute particles of high light absorption factor supplied from the particle supplying unit thereby producing a torch for igniting the air-fuel mixture.

Ignition apparatus for internal combustion engine

Growing community of inventors

Okazaki, Japan

Minoru Nishida