Fujitsu Corporation

Minoru Nakajima

Shiro Takeda

Toshisuke Kitakohji

Hiroshi Tokunaga

Yuji Nagai

Kunihiko Hayashi

Koji Serizawa

A patterning process is provided wherein a material to be etched is coated with a ladder type organosiloxane resin, the coated resin is irradiated with energy rays according to a desired pattern, the irradiated resin is subjected to a development treatment, and then, the material is etched by using the resin left after the development as a mask. The ladder type organosiloxane resin used is represented by the formula: ##STR1## wherein each R.sub.1 is independently selected from alkyl (Cl-6) groups, and phenyl and halophenyl groups, R.sub.2, R.sub.3, R.sub.4 and R.sub.5 are independently selected from hydrogen, alkoxy (Cl-3) groups, a hydroxyl group and alkyl (Cl-3) groups, and n is a number giving a Mw of about 1,000 to about 1,000,000. The patterning process can be advantageously employed for the production of electronic devices.

Patterning process using ladder-type organosiloxane resin and process

A silicone-type coating resin solution and a process for preparing the solution. This solution comprises 30 to 60 parts by weight of a hydrolytic condensation polymer of tetramethoxysilane or tetraethoxysilane (PDAS) having a weight average molecular weight of 1,000 to 6,000 and 70 to 40 parts by weight of a polysilsesquioxane prepolymer (PLOS) having a weight average molecular weight of 2,500 to 7,000 and in which each of 5 to 50 mole % of the organic groups attached directly to the silicon atoms is a phenyl group and the remaining organic groups are methyl, ethyl, or vinyl groups, these polymer components being dissolved in an organic solvent having a boiling point of not less than 110.degree. C. under a pressure of 760 mmHg. This solution is prepared by dissolving PDAS and PLOS in an organic solvent having a high boiling point and treating the resultant solution under a reduced pressure of not more than 5 mmHg.

Silicone-type coating resin solution

An improved electronic device having a multilayer wiring structure. An interlayer insulation layer or at least one of plural interlayer insulation layers, formed between metal wiring layers, is comprised of a cured coating of a ladder-type silsesquioxane polymer. A layer for protecting a metal wiring layer or layers may also be comprised of a cured coating of a similar polymer. The specified cured coating exhibits good resistance to heat and moisture and enhanced levelling on a pattern.

Electronic device having multilayer wiring structure

Electronic devices having a multilayer wiring structure, such as a semiconductor device, a bubble memory device and a thin film magnetic head, are manufactured by using, as an insulation layer-forming material, a thermosetting addition polymerization type polyimide, i.e., a polyimide possessing imide rings in the recurring unit thereof and the degree of polymerization of which increases, when cured, due to the radical reaction of the end group or groups. The polyimide insulation layer exhibits better levelling property than that of a conventional condensational type polyimide.

Method of manufacturing electronic device having multilayer wiring

An electronic circuit comprising a circuit substrate with electronic circuit elements bonded onto the circuit substrate with gaps between the circuit substrate and the respective electronic circuit elements has thermal conductive layers comprising an oxidatively curable resin filled into the gaps. The thermal conductive layers are produced by filling a varnish comprising an oxidatively curable resin into the gaps and exhibit excellent moist heat resistance and thermal conductive properties. The electronic circuit elements once mounted on the circuit substrate can easily be removed as required by releasing the bonding between the elements and the substrate.

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Kawasaki, Japan

Minoru Nakajima