Seiko Epson Corporation

Minoru Moriwaki

Masahiro Yasukawa

Tatsuya Ishii

Norikazu Kadotani

Yohei Sugimoto

Hiroaki Mochizuki

Suguru Uchiyama

Katsunori Tanaka

Takanori Fukuyama

Ken Wakita

A light modulation device having a pixel arrangement region in which a plurality of pixels are arranged includes a first substrate, a second substrate disposed to be opposed to the first substrate via a liquid crystal layer, and a cooling member disposed on the opposite side of the first substrate with respect to the second substrate and thermally connected to the second substrate. The cooling member includes a hollow space in which working fluid is encapsulated and changes the working fluid in a liquid phase to the working fluid in a gas phase to cool the liquid crystal layer via the second substrate.

Light modulation device and projector

An electro-optical device includes a substrate, a transistor over the substrate, a pixel electrode over the transistor, a source line between the transistor and the pixel electrode, a fixed potential line over the substrate, a first capacitive element comprising a first electrode electrically connected to the fixed potential line, a first capacitance film, and a second electrode, a second capacitive element comprising the second electrode, a second capacitance film, and a third electrode electrically connected to the fixed potential line, a third capacitive element comprising the fixed potential line, a third capacitance film, and a fourth electrode. The first capacitive element and the second capacitive element are provided between the transistor and the source line, and the third capacitive element is provided between the source line and the pixel electrode.

Electro-optical device and electronic apparatus

An electro-optical device is capable of high quality images. An electro-optical device () includes a first capacitive element (), a second capacitive element (), and a third capacitive element (). The first capacitive element () includes a first conductive film (), a first part of a second conductive film (), and a first dielectric film (). The second capacitive element () includes a third conductive film (), a second part of a fourth conductive film (), and a second dielectric film (). The third capacitive element () includes the third conductive film (), a third part of the fourth conductive film (), and the second dielectric film (). Since a capacitive element that includes a large capacitance value is formed in a narrow region, even if the pixel becomes smaller as the definition is increased, it is possible to realize an excellent electro-optical device in which display defects are suppressed.

A color filter substrate includes a color filter layer, a light-transmissive layer and a light-shielding layer. The light-transmissive layer is disposed between pixels and includes a side surface that forms a reflection surface. The light-shielding layer is laminated on the light-transmissive layer.

Color filter substrate, electro-optic device, and electronic apparatus

In an element substrate of an electro-optical device, MOS transistors (electrostatic protection element) are provided on an opposite side to a light transmitting substrate with respect to the insulating film, and heat dissipation layers that overlap drain regions of the MOS transistor in a plan view are provided between the light transmitting substrate and the insulating film. In addition, the heat dissipation layers are connected to the drain regions through contact holes which are formed in the insulating film.

Electro-optical device, electronic apparatus and semiconductor device

In at least one embodiment of the disclosure, an electro-optical device comprises a pixel electrode and a transistor corresponding to the pixel electrode. A data line is electrically connected to the transistor. A storage capacitor is provided between the pixel electrode and the transistor. The storage capacitor has a first capacitance electrode and a second capacitance electrode facing each other. A capacitance isolation film is interposed therebetween. An additional capacitor is electrically connected to the data line. The additional capacitor has a first additional capacitance electrode and a second additional capacitance electrode facing each other. An additional capacitance isolation film is interposed therebetween. The first additional capacitance electrode is provided on a same layer as the first capacitance electrode. The second additional capacitance electrode is provided on a layer different from the layers of the first and second capacitance electrodes.

A retention capacity in which a first electrode, a lower side capacity insulation film, a second electrode, an upper side capacity insulation film, and a third electrode are laminated is formed between a pixel electrode and a TFT. The lower side capacity insulation film and the upper side capacity insulation film respectively include a plurality of insulation films, and the lamination order thereof is the same.

Electro-optic apparatus and electronic apparatus

An electro-optical device includes a pixel electrode provided on a substrate, a transistor provided between the substrate and the pixel electrode, a first capacitor electrode provided between the pixel electrode and the transistor, and be electrically connected to the pixel electrode and the transistor, a second capacitor electrode provided between the pixel electrode and the first capacitor electrode, be located so as to be opposite the first capacitor electrode via a capacitor insulating film, and be supplied with a predetermined electric potential, and a light-shielding film provided between the pixel electrode and the second capacitor electrode, be located so as to be at least partially overlapped by the transistor, and be electrically connected to the second capacitor electrode via a contact hole formed in an insulating film disposed between the second capacitor electrode and the light-shielding film.

An electro-optical device includes: a pixel electrode provided on a substrate; a transistor being provided between the substrate and the pixel electrodes; and a holding capacitor, provided between the pixel electrode and the transistor, configured of a first electrode, a second electrode provided opposing the first electrode via a first capacitor insulation film, and a third electrode provided opposing the first electrode via a second capacitor insulation film. Both the first capacitor insulation film and the second capacitor insulation film have multiple layers; the first capacitor insulation film and the second electrode are formed symmetrical to the second capacitor insulation film and the third electrode when viewed from the first electrode.

Electro-optical device having a holding capacitor comprising a first electrode, a second electrode, and a third electrode with a first capacitor insulation film and a second capacitor insulation film each being formed of first and second capacitor insulation layers

An electro-optical device substrate includes a substrate, a plurality of data lines and a plurality of scanning lines crossing each other on the substrate, and a plurality of pixels defined by the plurality of data lines and the plurality of scanning lines so as to correspond to intersections thereof. Each pixel includes a pixel electrode, a conducting layer formed in a non-opening region separating an opening region of the pixel from that of another pixel, the conducting layer having a protruding portion protruding into the opening region from a part of one of a plurality of region edges defining the opening region, and a first contact portion electrically connecting the pixel electrode and the protruding portion.

Electro-optical device substrate, electro-optical device, and electronic apparatus

The invention provides a connection structure including: a first electro-conductive film that is formed on a substrate; an insulation film that is formed on the first electro-conductive film, an end surface of the insulation film facing in a direction in which an end surface of the first electro-conductive film faces; and a second electro-conductive film that extends from the upper surface of the insulation film to reach the end surface of the first electro-conductive film across the end surface of the insulation film, the second electro-conductive film being electrically connected to the first electro-conductive film via the end surface of the first electro-conductive film.

Connection structure, electro-optical device, and method for production of electro-optical device

An electro-optical device that includes a transistor and an insulating film over the semiconductor layer of the transistor. The insulating film has an opening portion that overlaps the channel region. The gate electrode of the transistor includes a body portion arranged in the opening portion of the insulating film and an elongated portion that extends onto the insulating film so as to cover the second junction portion of the transistor. The second junction region is located in an intersection region of a non-aperture region of the display pixel.

Electro-optical device substrate, method of manufacturing the same, electro-optical device and electronic apparatus

An electro-optical device includes a semiconductor layer, a first insulating film, a second insulating film, and a gate electrode. The first insulating film is formed in an island shape so as to cover a first junction region of the semiconductor layer. The second insulating film is formed in an island shape so as to cover a second junction region of the semiconductor layer. The gate electrode faces the channel region through a gate insulating film and extends onto the first and second insulating films.

An electro-optic device substrate includes a base and a TFT element having a source region and a drain region disposed on the base. The TFT element includes a silicon layer in the source region or the drain region, and the silicon layer at least partially includes a silicided portion. The electro-optic device substrate also includes a metal wire connected to the silicided portion of the silicon layer.

Method for manufacturing electro-optic device substrate with titanium silicide regions formed within

An electro-optic device includes a substrate, data lines and scanning lines extending so as to cross each other, pixel electrodes each arranged for one of a plurality of pixels defined by crossing of the data lines and the scanning lines in plan view of the substrate, thin film transistors each electrically connected to one of the pixel electrodes, and storage capacitors each electrically connected to one of the pixel electrodes. Each of the storage capacitors is arranged above the corresponding thin film transistor so as to overlap at least a channel region of the thin film transistor in plan view of the substrate. The storage capacitors each include a lower electrode composed of a polysilicon film and an upper electrode composed of a dielectric film and a metal film stacked in this order from the bottom.

Growing community of inventors

Fujimi-machi, Japan

Minoru Moriwaki