Hitachi-kokusai Electric Inc.

Minoru Kogano

Yasuhiro Inokuchi

Atsushi Moriya

Yasuo Kunii

Makoto Sambu

An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body is provided between a furnace opening flange and a boat susceptor so that a substrate processing space is isolated from a furnace opening portion space to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space At a furnace opening flange a furnace opening exhausting tube is provided which constitutes a furnace opening system for exhausting the space independently of the space so that the space is exhausted while being purged by supplying a purge gas into the space to thereby remove a contaminant from the space A gas supplying nozzle which is introduced from the flange is extended from the space to the space so that a reaction gas is directly introduced into the space to thereby prevent a contaminant Within the space from being involved in the space

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Tokyo, Japan

Minoru Kogano