Matsushita Electric Industrial Co., Ltd.

Tokyo Shibaura Denki Kabushiki Kaisha

Agency of Industrial Science and Technology

Minoru Kimura

Hidemi Takahashi

Reiji Sano

Makoto Kato

Yoshikazu Kawauchi

Nobuaki Furuya

Yasuyuki Morita

Hiroshi Naito

Kimikatsu Sato

Koichi Saito

Bunzi Takeuchi

A microwave powered gas laser apparatus contains a gas medium, and a device for exciting the gas medium to a high energy state by a plurality of microwaves. Directions of vibrations of electric fields of the microwaves are different from each other. There may be provided a device for making the microwaves into standing waves respectively, and a device for exposing the gas medium to antinodes of electric fields of the standing waves.

Microwave powered gas laser apparatus

A thermally insulating casing accommodates an infrared ray sensing element. The casing has a window which conducts infrared ray to the sensing element. The window is covered with heat absorption gas. An infrared ray emitting element may be accommodated within the casing. The casing may have a second window which passes infrared ray generated by the emitting element. The second window may be covered with the heat absorption gas.

Infrared ray sensing device

Method and apparatus for measuring a distance to an object includes directing first and second laser beams having frequencies .omega..sub.11 and .omega..sub.12 toward the object. A first reference signal is derived having a beat frequency .omega..sub.1 =.omega..sub.11 -.omega..sub.12. A first reflected light beam reflected from the object is detected and has the beat frequency .omega..sub.1 and a first phase difference with respect to the first reference signal. The first phase difference is then extracted from the first reference signal and the first reflected light beam and a first plurality of distance nodes is calculated from the first phase difference. Then, the frequency of the second laser beam is changed to .omega..sub.13. A second reference signal having a beat frequency of .omega..sub.2 =.omega..sub.11 -.omega..sub.13 is then derived. A second reflected light beam reflected from the target is detected and has the beat frequency of .omega..sub.2 and a second phase different with respect to the second reference signal. The second phase difference is then extracted from the second reference signal and the second reflected light beam and a second plurality of distance nodes is then calculated from the second phase difference. Finally, the minimum distance node coincident between the first and second pluralities of nodes is selected as the distance to the object.

Distance measurement by laser light

A coaxial-type carbon dioxide gas laser includes an oscillator comprising a gas inlet for introducing gas into a discharge tube through a gas supply chamber having a hollow cylindrical body which serves to disturb the gas flow and orientate the gas toward the discharge tube via a space defined between the discharge tube and the hollow cylindrical body. The gas which has been subjected to an electrical discharge is drawn out of the discharge tube through a chamber and a gas outlet connected therewith. A pair of anode and cathode electrodes are disposed adjacent to the ends of the discharge tube. One of the electrodes is mounted on the gas supply chamber and is annular in shape. The gas supply chamber and the hollow cylindrical body jointly define a gap for passage therethrough of the gas fed from the gas inlet toward the discharge tube via the space. The space is large in cross section than the gap. The discharge tube has an inside cross-sectional area smaller than an outside cross-sectional area and larger than the cross-sectional area of the gap.

Coaxial-type carbon dioxide gas laser oscillator

The invention provides an SOS substrate for a semiconductor device wherein an epitaxial silicon layer which has an index of plane (100) is formed on a single crystal sapphire plate which has an index of plane (1012). An orientation flat is formed at an incline angle of 2.1 to 2.2.degree. with respect to a [011] or [011] direction on the surface of the epitaxial silicon layer which has the index of plane (100). The direction of the orientation flat on the surface of the sapphire plate is aligned with the direction of a cleavage plane of the sapphire plate.

SOS Substrate for semiconductor device

A method for manufacturing semiconductor devices containing at least one MOS field effect transistor (FET) so as to control the effective channel length thereof and prevent channel-shortening. A mask wider than the desired MOS FET channel is formed on the surface of a first single-crystalline silicon semiconductor region, and the lattice structure of the unmasked surface portions thereof are randomized or disordered by silicon ion-implantation or by etching. After removal of the mask, epitaxial growth produces a polycrystalline region on the randomized regions and a second single-crystalline region on the previously masked region. An insulated gate electrode narrower than the single-crystalline region is formed centrally thereupon for serving as a mask during impurity implantation into the polycrystalline region and the portions of the second single-crystalline region adjacent thereto. In subsequent heat treatment impurity diffusion is slower in the second single-crystalline region that in the polycrystalline region, advantageously inhibiting lateral impurity diffusion from the second single-crystalline region into the channel underlying the gate electrode, thereby to control channel shortening, while at the same time permitting deep impurity diffusion in the polycrystalline regions for reducing resistance of the diffusion layer as a whole.

Growing community of inventors

Kawasaki, Japan

Minoru Kimura