Sony Corporation

Sony Semiconductor Solutions Corporation

Tanaka Kikinzoku Kogyo K.k.

Sony Group Corporation

National Institute of Technology

Tessera Advanced Technologies, Inc.

Marusan Co., Ltd.

Minoru Ishida

Hiroshi Horikoshi

Tadashi Iijima

Reijiroh Shohji

Masaki Haneda

Ikue Mitsuhashi

Takatoshi Kameshima

Hideto Hashiguchi

Nobutoshi Fujii

Hiroshi Tazawa

Suguru Saito

Hiroyasu Matsugai

Hiroyuki Itou

Keiji Ohshima

Toshiaki Shiraiwa

Koichi Matsutani

Katsuhisa Aratani

Akira Kouchiyama

Masanori Iwasaki

Yoshiaki Masuda

Takashi Oinoue

Toshihiko Hayashi

Shuzo Sato

Yusuke Moriya

Tomohito Tsushima

Yoshiya Hagimoto

Shinji Miyazawa

Yoshiaki Kitano

Masaki Okamoto

Keiichi Nakazawa

Harumi Tanaka

Hirofumi Yamashita

Toshihiro Kurobe

Kazutaka Yamane

Masayuki Saito

Sachio Iida

Takashi Machida

Atsushi Yamada

Norihito Mihota

Teruo Hirayama

Kiyotaka Tabuchi

Junichi Taniuchi

Hajime Yamagishi

Koichi Takeuchi

Takuya Ichihara

Kiyoshi Toyota

Tomohiko Asatsuma

Kunihiko Hikichi

Shota Hida

Takahiro Oishi

Hitoshi Nakajima

Hiroshi Takahashi

Akira Suzuki

Atsushi Yamamoto

Yutaka Okamoto

Kiyoshi Ohmori

Munekatsu Fukuyama

Tomofumi Arakawa

Hirotaka Yoshioka

Takeshi Kaieda

Hiroshi Nakanishi

Takayuki Okuno

Hideaki Kasai

Sotetsu Saito

Katsuhisa Kugimiya

Hironori Hoshi

Wataru Hashimoto

Susan Menez Aspera

Bhume Chantaramolee

Tatsunori Namai

Kazuki Okaya

A sensor device is disclosed for measuring an amount of moisture in a medium that includes: a transmission antenna; a reception antenna to receive electromagnetic waves transmitted from the transmission antenna and through a medium; a measurement unit to measure the electromagnetic waves propagating to the reception antenna; and a sensor casing and further includes a transmission substrate including a plurality of wiring layers and a reception substrate including a plurality of wiring layers, and a measurement unit substrate including a plurality of wiring layers and includes the measurement unit or a first coating layer that, in a part of the transmission substrate, coats an outer circumference of the substrate and is formed from an electromagnetic wave absorbent material and a second coating layer that, in a part of the reception substrate, coats an outer circumference of the substrate and is formed from an electromagnetic wave absorbent material.

Sensor device

There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line another wiring layer.

Solid-state imaging device and electronic apparatus

To provide a solid-state imaging device and an electronic apparatus with further improved performance. A solid-state imaging device including: a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked; a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked; and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. The pixel unit has pixels arranged thereon. The first substrate and the second substrate are bonded together in a manner that the first multi-layered wiring layer and the second semiconductor substrate are opposed to each other. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate. Alternatively, the first coupling structure does not exist.

Solid-state imaging device and electronic device including coupling structures for electrically interconnecting stacked semiconductor substrates

An imaging element according to an embodiment of the present disclosure includes: a first substrate, a second substrate, and a third substrate that are stacked in this order. The first substrate including a sensor pixel that performs photoelectric conversion and the second substrate including a readout circuit are electrically coupled to each other by a first through wiring line provided in an interlayer insulating film. The second substrate and the third substrate including a logic circuit are electrically coupled to each other by a junction between pad electrodes or a second through wiring line penetrating through a semiconductor substrate.

Imaging element

A device for measuring the amount of moisture in a medium that includes a transmission antenna that sends a signal as an electromagnetic wave, a reception antenna that receives the electromagnetic wave sent from the transmission antenna and transmitted through a medium, a measurement section that measures the electromagnetic wave propagated to the reception antenna, and a sensor casing. The sensor device further includes a transmission substrate that includes a plurality of wiring layers and a reception substrate that includes a plurality of wiring layers, or a first covering layer that partially covers an outer periphery of the transmission substrate and a second covering layer that partially covers an outer periphery of the reception substrate The coverings are formed of an electromagnetic wave absorption material. The sensor casing includes a transmission probe casing that accommodates the transmission substrate and a reception probe casing that accommodates the reception substrate.

A solid-state imaging device is provided that comprises a first substrate that includes a first multi-layered wiring layer stacked on a first semiconductor substrate, a second substrate that includes a second multi-layered wiring layer and an insulating layer stacked on a second semiconductor substrate, and a third substrate that includes a third multi-layered wiring layer stacked on a third semiconductor substrate. A first coupling structure electrically couples the first and second substrates to each other. A second coupling structure exists on bonding surfaces of the second and third substrates, and includes an electrode junction structure in which electrodes formed on respective bonding surfaces are in direct contact with each other. A first via penetrates the second semiconductor substrate and electrically couples a first electrode to a wiring in the second multi-layered wiring layer. A second via electrically couples the second electrode to another wiring in the third multi-layered wiring layer.

A catalyst for an oxygen reduction reaction containing catalyst particles having a shell-core structure containing a PtCo alloy or a PtCoMn alloy as a core, and platinum as a shell layer. A specific plane of a face-centered cubic lattice is formed by a plurality of platinum atoms contained in the shell layer, and a lattice constant of the plane of the face-centered cubic lattice on the catalyst particle surface is 3.70 Å or more and 4.05 Å or less (in a PtCo alloy), or 3.870 Å or more and 4.10 Å or less (in a PtCoMn alloy). A catalyst design method includes a step of calculating, with respect to an orientation plane such as the plane formed by platinum atoms of the shell layer, adsorption energies for an oxygen molecule, an OH group and a water molecule by first-principles calculation based on density functional theory.

Core-shell catalyst for oxygen reduction reaction, and method of designing catalyst

Provided is a solid-state imaging device that includes a first substrate which includes a first semiconductor substrate and a first multi-layered wiring layer that are stacked, a second substrate which includes a second semiconductor substrate and a second multi-layered wiring layer that are stacked, and a third substrate which includes a third semiconductor substrate and a third multi-layered wiring layer that are stacked. The solid-state imaging device further includes a first coupling structure for electrically coupling a circuit of the first substrate and a circuit of the second substrate to each other. The first coupling structure includes a via in which one through hole electrically couples a predetermined wiring line in the first multi-layered wiring layer, and a predetermined wiring line in the second multi-layered wiring layer or a predetermined wiring line in the third multi-layered wiring layer to each other.

This technology relates to a solid-state imaging device and an electronic apparatus by which image quality can be enhanced. The solid-state imaging device includes a pixel region in which a plurality of pixels are arranged, a first wiring, a second wiring, and a shield layer. The second wiring is formed in a layer lower than that of the first wiring, and the shield layer is formed in a layer lower at least than that of the first wiring. This technology is applicable to a CMOS image sensor, for example.

Solid-state imaging device and electronic apparatus to enhance image quality

There is provided a solid-state imaging device including first, second, and third substrates stacked in this order. The first substrate includes a first semiconductor substrate and a first wiring layer. A pixel unit is formed on the first semiconductor substrate. The second substrate includes a second semiconductor substrate and a second wiring layer. The third substrate includes a third semiconductor substrate and a third wiring layer. A first coupling structure couples two of the first, second, and third substrates to each other includes a via. The via has a structure in which electrically-conductive materials are embedded in one through hole and another through hole, or a structure in which films including electrically-conductive materials are formed on inner walls of the through holes. The one through hole exposes a first wiring line in one of the wiring layers. The other through hole exposes a second wiring line in another wiring layer.

The present invention relates to a catalyst for solid polymer fuel cells in which catalyst particles containing Pt as an essential catalyst metal are supported on a carbon powder carrier. The catalyst has good initial activity and good durability. When the catalyst is analyzed by X-ray photoelectron spectroscopy after potential holding at 1.2 V (vs. RHE) for 10 minutes in a perchloric acid solution, a ratio of zero-valent Pt to total Pt is 75% or more and 95% or less. The present inventive catalyst metal is preferably one obtained by alloying Pt with one of Co, Ni and Fe, and further with one of Mn, Ti, Zr and Sn. In addition, it is preferable that a fluorine compound having a C—F bond is supported on at least the surfaces of catalyst particles in an amount of 3 to 20 mass % based on the total mass of the catalyst.

Catalyst for solid polymer fuel cell and method for selecting catalyst for solid polymer fuel cell

A solid-state imaging device including: a first substrate having a pixel unit, and a first semiconductor substrate and a first wiring layer; a second substrate with a circuit, and a second semiconductor substrate and a second wiring layer; and a third substrate with a circuit, and a third semiconductor substrate and a third wiring layer. The first and second substrates are bonded together such that the first wiring layer and the second semiconductor substrate are opposed to each other. The device includes a first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate. The first coupling structure includes a via in which electrically-conductive materials are embedded in a first through hole that exposes a wiring line in the first wiring layer and in a second through hole that exposes a wiring line in the second wiring layer or a film-formed structure.

Light detecting device with multiple substrates

The present disclosure relates to reducing the size of a solid-state imaging apparatus. The solid-state imaging apparatus is configured by laminating a first structure body, comprising a pixel array unit in which pixels for performing photoelectric conversion are two-dimensionally aligned, and a second structure body, comprising an output circuit unit for outputting a pixel signal. The output circuit unit, including a through via which penetrates a semiconductor substrate constituting a part of the second structure body, and a signal output external terminal connected to the outside of the apparatus are arranged under the first structure body, the output circuit unit is connected to the signal output external terminal via the through via, and the outermost surface of the apparatus is a resin layer formed on an upper layer of an on-chip lens of the pixel array unit.

Solid-state imaging apparatus having output circuit unit for outputting a pixel signal

There is provided a solid-state imaging device including: a first substrate including a first semiconductor substrate and a first wiring layer, the first semiconductor substrate having a pixel unit with pixels; a second substrate including a second semiconductor substrate and a second wiring layer, the second semiconductor substrate having a circuit with a predetermined function; and a third substrate including a third semiconductor substrate and a third wiring layer, the third semiconductor substrate having a circuit with a predetermined function, the first, second, and third substrates being stacked in this order, the first substrate and the second substrate being bonded together with the first wiring layer and the second wiring layer opposed to each other, a first coupling structure on bonding surfaces of the first substrate and the second substrate, and including an electrode junction structure with electrodes formed on the respective bonding surfaces in direct contact with each other.

A solid-state imaging device including a first substrate on which a pixel unit is formed, and a first semiconductor substrate and a first multi-layered wiring layer are stacked, a second substrate on which a circuit having a predetermined function is formed, and a second semiconductor substrate and a second multi-layered wiring layer are stacked, and a third substrate on which a circuit having a predetermined function is formed, and a third semiconductor substrate and a third multi-layered wiring layer are stacked. The first substrate, the second substrate, and the third substrate are stacked in this order. A first coupling structure for electrically coupling a circuit of the first substrate and the circuit of the second substrate to each other does not include a coupling structure formed from the first substrate as a base over bonding surfaces of the first substrate and the second substrate.

Growing community of inventors

Tokyo, Japan

Minoru Ishida