Fujitsu Corporation

Minoru Inoue

Daisuke Fujita

Takahiro Takenaka

Masao Tomofuji

Masayuki Kawashima

Kouzi Hashizume

Kazuhiko Horiuchi

Ryuji Iwama

Naoyuki Kodama

Shigeo Yoshikawa

A communication method executed by an information processing apparatus capable of transmitting data of a plurality of sessions to another information processing apparatus, the method includes: acquiring from the another information processing apparatus processing time information according to a time taken for processing a first data received by the another information processing apparatus; calculating an upper limit value of an amount of data per unit time permitted to each of the plurality of sessions for transmission using the processing time information; and limiting the amount of data for each of the plurality of sessions based on the upper limit value calculated at the calculating upon transmitting a second data including data of one or more sessions to the another information processing apparatus.

Communication method, information processing apparatus and recording medium

A communication method executed by an information processing apparatus capable of transmitting data to another information processing apparatus, the method includes: setting a first threshold as an amount of data capable of being transmitted without waiting for a reply from the another information processing apparatus; transmitting a first data having a data amount less than or equal to the first threshold to the another information processing apparatus; acquiring from the another information processing apparatus processing time information taken to process the first data by the another information processing apparatus; and changing the first threshold concerning the data amount into a second threshold based on the processing time information.

Communication method, information processing apparatus, and recording medium

A communication control system includes a first computer and a second computer, wherein the first computer includes a communication interface device and a first processor configured to control the communication interface device to transmit first data and first feature information indicating a feature of the first data to the second computer, and the second computer includes a memory that has a storage area allocated to store second data received from the first computer, and a second processor configured to determine whether the first feature information received from the first computer matches second feature information, indicating a feature of and calculated based on the second data stored in the storage area, and control the memory to release the storage area when the second feature information does not match the received first feature information.

Communication control system, method, and apparatus

In a data processing apparatus, when an instruction for starting validation is provided, or when definition information is updated, data input from a data source is collected, and a process for narrowing down of the collected data is executed. In the data narrowing process, by extracting records and items as process targets according to the definition information that defines the operation of the apparatus, the number of data items used for validation is reduced. Then, the operation is validated using the narrowed data. In the operation validation process, a virtual transfer destination of output of data is provided within the apparatus, and the data is output to the virtual transfer destination, for comparison with the output data, whereby the validation of the operation is performed.

Data processing apparatus that performs test validation and computer-readable storage medium

There is disclosed a method for depositing a thin film on a substrate placed in a chamber by a sputtering process in which a target mounted on a cathode assembly is sputtered under predetermined ambient conditions in the chamber. The method includes the steps of: mounting a target, which is formed of a backing plate and a target plate directly connected to the backing plate, on the cathode assembly, the backing plate having a heat conductivity greater than that of the target plate; heating the target at a predetermined temperature at which residual gases absorbed on the target plate are removed therefrom; and activating the cathode assembly so that the target plate is sputtered. The target can also be formed of a backing plate, a spacer directly connected to the backing plate, and a target plate directly connected to the spacer, the spacer having a melting point greater than that of the target plate.

Method for depositing thin film on substrate by sputtering process

A method of forming an electrical contact between interconnection layers located at different layer levels includes the steps of forming a contact hole in an interlayer insulating film, and forming a metallic intermediate layer on an exposed surface portion of a first conductive interconnection layer and the interlayer insulating film. Then, a portion of said metallic intermediate layer exposed through said contact hole and an oxide film formed on said surface portion of the first conductive interconnection layer are eliminated by an etching process. This process is carried out in a vacuum. After that, in the vacuum, a second conductive interconnection layer is formed in said contact hole and formed on said interlayer insulating film so that an electrical contact between said first and second conductive interconnection layers are formed.

Method of forming electrical contact between interconnection layers

A method for forming a metal layer includes the steps of forming an insulation layer having at least one step portion on a wafer; and forming the metal layer over the insulation layer. The metal layer is formed by depositing aluminum-based alloy by sputtering while the wafer is heated to a temperature higher than a predetermined temperature. As a result, at the step portion, a good step coverage can be obtained and the surface of the metal layer can be planarized. At the same time, the method according to the present invention contributes to a prevention of deterioration in the quality of the layer and facilitates a process to be carried out at a later stage.

Method for forming metal layer

A method for sputtering by a glow discharge in gas is disclosed. The sputtering chamber is evacuated by a pump with a high speed, and the flow rate of the gas injected into the chamber is varied periodically between a high flow rate and a low flow rate. During the high flow rate, the discharge is ignited. The glow discharge is sustained during the low flow rate injection period, and when the pressure becomes too low to maintain a stable discharge, the flow rate is again increased to ignite or reinforce the electric discharge. In such a manner, the flow rate of the injection gas is periodically alternated between a high and a low injection rate. The sputtering is mostly done at the lower injection rates, and the evacuation speed is kept always high. Accordingly, contamination otherwise caused by residual gas is prevented, and a high grade sputtered film is obtained. By operating in this manner, the gas consumption is reduced and the life of the cryogenic pump, used for evacuating the sputtering chamber, is prolonged, and hence the on line operation of the sputtering device is improved.

Sputtering method for fabricating thin film

A titanium nitride barrier layer of 50 to 200 nm in thickness is fabricated between a silicon substrate and an aluminum electrode layer of an IC device by reactive sputtering performed in a mixed gas including oxygen in a proportion of 1 to 5% by volume relative to other gases, comprising an inert gas and a reactive gas, providing the temperature of the silicon substrate at 350.degree. to 550.degree. C. during the reactive sputtering, so that the product has a failure rate, indicating the property of preventing mutual diffusion of silicon and aluminum atoms from occurring, of less than 1% and a resistivity less than 100 .mu..OMEGA..cm.

Method of forming a barrier layer between a silicon substrate and an

A semiconductor device comprising a metallized layer formed on a silicon substrate, wherein said metallized layer is an aluminum alloy consisting essentially of aluminum, silicon and at least one element selected from the group consisting of titanium, vanadium, chromium, tungsten, and phosphorus the amount of silicon being 1.0% to 3.0% by weight, the amount of said selected element corresponding to the relative service life required of the metallized layer, said required service life being 10 times that of a metallized layer having the same composition as that of the above-mentioned metallized layer except for being free from said element, and the rest being aluminum. For example, the metallized layer may contain at least 0.04% and less than 0.10% by weight of titanium, 1.0% by weight of silicon, and the rest aluminum.

Aluminum metallized layer formed on silicon wafer

This high temperature heating sputtering process comprises the steps of:

Method for controlling substrate temperature in a high temperature

A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, on which window plate the substrate is mounted. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, with result that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.

Microwave apparatus for vacuum treating and heating a semiconductor

A semiconductor substrate arranged in a vacuum treating chamber is heated by using microwaves. The chamber is provided with a window plate pervious to microwaves, and the substrate is mounted on the window plate. A microwave generator is arranged outside of the chamber. The radiated microwaves are guided to the window plate, penetrate it, and are absorbed by the semiconductor substrate, so that the substrate is directly heated to a predetermined temperature in a short time. Since no microwaves leak through the substrate, no parts in the chamber are heated.

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Kawasaki, Japan

Minoru Inoue