Rohm Co., Ltd.

Tdk Corporation

Minoru Akutsu

Norikazu Ito

Tetsuya Fujiwara

Ken Nakahara

Kenji Yamamoto

Taketoshi Tanaka

Shinya Takado

Kentaro Chikamatsu

Tsuguki Noma

Yoshito Nishioka

Koji Shimazawa

Hirotaka Otake

Yoichi Mugino

Kazuya Nagase

A nitride semiconductor device includes an electron transit layer that is formed of a nitride semiconductor, an electron supply layer that is formed on the electron transit layer, and formed of a nitride semiconductor and that has a recess which reaches the electron transit layer from a surface, a thermal oxide film that is formed on the surface of the electron transit layer exposed within the recess, a gate insulating film that is embedded within the recess so as to be in contact with the thermal oxide film, a gate electrode that is formed on the gate insulating film and that is opposite to the electron transit layer across the thermal oxide film and the gate insulating film, and a source electrode and a drain electrode that are provided on the electron supply layer at an interval such that the gate electrode intervenes therebetween.

Nitride semiconductor device and fabrication method therefor

A nitride semiconductor deviceincludes a first nitride semiconductor layer that constitutes an electron transit layer, a second nitride semiconductor layer that is formed on the first nitride semiconductor layer, is larger in bandgap than the first nitride semiconductor layer, and constitutes an electron supply layer, a gate portion that is formed on the second nitride semiconductor layer, and a source electrode and a drain electrode that, on the second nitride semiconductor layer, are opposingly disposed across the gate portion. The gate portion includes a third nitride semiconductor layer of a ridge shape that is formed on the second nitride semiconductor layer and contains an acceptor type impurity and a gate electrode that is formed on the third nitride semiconductor layer. A film thickness of the third nitride semiconductor layer is greater than 100 nm.

Nitride semiconductor device

A semiconductor devicehas an electrode structure that includes source electrodes, a gate electrode, and drain electrodesdisposed on a semiconductor laminated structureand extending in parallel to each other and in a predetermined first direction and a wiring structure that includes source wirings, drain wirings, and gate wiringsdisposed on the electrode structure and extending in parallel to each other and in a second direction orthogonal to the first direction. The source wirings, the drain wirings, and the gate wiringsare electrically connected to the source electrodes, the drain electrodes, and the gate electrode, respectively. The semiconductor deviceincludes a conductive filmdisposed between the gate electrodeand the drain wiringsand being electrically connected to the source electrodes

Semiconductor device and method for producing same

A semiconductor device includes a semiconductor element, a first lead, a second lead and a connection lead. The semiconductor element includes an electron transit layer formed of a nitride semiconductor, an element obverse face and an element reverse face that are arranged to face opposite to each other in a thickness direction, and a gate electrode, a source electrode and a drain electrode that are disposed on the element obverse face. The drain electrode is bonded to the first lead. The source electrode is bonded to the second lead. The connection lead is connected to the second lead and disposed on the element reverse face so as to overlap with the semiconductor element as viewed in the thickness direction. The connection lead provides a conduction path for a principal current subjected to switching.

Semiconductor device

A nitride semiconductor device includes an electron transit layer () that is formed of a nitride semiconductor, an electron supply layer () that is formed on the electron transit layer (), that is formed of a nitride semiconductor whose composition is different from the electron transit layer () and that has a recess () which reaches the electron transit layer () from a surface, a thermal oxide film () that is formed on the surface of the electron transit layer () exposed within the recess (), a gate insulating film () that is embedded within the recess () so as to be in contact with the thermal oxide film (), a gate electrode () that is formed on the gate insulating film () and that is opposite to the electron transit layer () across the thermal oxide film () and the gate insulating film (), and a source electrode () and a drain electrode () that are provided on the electron supply layer () at an interval such that the gate electrode () intervenes therebetween.

A semiconductor device includes: a back barrier layer containing AlGaN (0&#x3c;X&#x2264;1); an electron transit layer containing AlInGaN (0&#x2264;a+b&#x2264;1) and formed on the back barrier layer; a top barrier layer containing AlGaN (0&#x3c;Y&#x2264;1) and formed on the electron transit layer; an electron supply layer containing AlGaN (0&#x3c;Z&#x2264;1) and formed on the top barrier layer, the electron supply layer having an opening to expose the top barrier layer; a two-dimensional electron gas region formed in an area of a surface layer portion of the electron transit layer, the area opposing the electron supply layer with the top barrier layer interposed between the electron supply layer and the area; a gate insulating layer formed in the opening of the electron supply layer; and a gate electrode layer formed on the gate insulating layer and opposing the electron transit layer with the gate insulating layer interposed therebetween.

Semiconductor device and manufacturing method thereof

A nitride semiconductor device includes: an electron transit layer including GaxIn1-xN (0&#x3c;x&#x2264;1); an electron supply layer formed on the electron transit layer and including AlyIn1-yN (0&#x3c;y&#x2264;1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.

Nitride semiconductor device and method for manufacturing the same

A nitride semiconductor device includes: an electron transit layer including GaInN (0&#x3c;x&#x2264;1); an electron supply layer formed on the electron transit layer and including AlInN (0&#x3c;y&#x2264;1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.

A nitride semiconductor device according to the present invention includes a nitride semiconductor layer including an electron transit layer and an electron supply layer which is in contact with the electron transit layer and which has a composition different from that of the electron transit layer, a gate electrode on the nitride semiconductor layer and a gate insulating film between the gate electrode and the nitride semiconductor layer. A region whose depth is 250 nm from an interface between the gate insulating film and the gate electrode includes a region which has a deep acceptor concentration equal to or more than 1.0&#xd7;10cm.

A nitride semiconductor device includes: an electron transit layer including GaInN (0&#x3c;x&#x2266;1); an electron supply layer formed on the electron transit layer and including AlInN (0&#x3c;y&#x2266;1); a gate insulating film formed to pass through the electron supply layer to contact the electron transit layer; and a gate electrode facing the electron transit layer with the gate insulating film interposed therebetween, wherein, in the electron transit layer, a portion contacting the gate insulating film and a portion contacting the electron transit layer are flush with each other.

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Kyoto, Japan

Minoru Akutsu