Mosel Vitelic Corporation

Minn-Horng Juang

Cheng-Tsung Ni

Chih-Hsien Wang

A method for preventing substrate damage during semiconductor fabrication, comprising, forming a pad oxide layer on the substrate, depositing a polysilicon buffer layer on the pad oxide layer, ion-implanting fluorine into the polysilicon buffer layer, depositing a silicon nitride layer on the polysilicon buffer layer, defining an active region in the substrate, forming a local oxide layer beside the surface of the active region, removing the silicon nitride layer, removing the polysilicon buffer layer by dry etching, and etching the pad oxide layer to expose the substrate surface of active region.

Growing community of inventors

Ping-Tung, Taiwan

Minn-Horng Juang