Changxin Memory Technologies, Inc.

Beijing Superstring Academy of Memory Technology

Minmin Wu

Guangsu Shao

Deyuan Xiao

Xiaoguang Wang

Yunsong Qiu

Huihui Li

Qiang Zhang

Shan Wang

Pan Yuan

The present application provides a semiconductor structure and a manufacturing method thereof, relates to the technical field of semiconductors. The manufacturing method includes: providing a substrate, the substrate including a first semiconductor material layer, a silicon-germanium compound layer and a second semiconductor material layer that are stacked sequentially; forming, in the substrate, first trenches extending along a first direction and second trenches extending along a second direction, and the first trenches and the second trenches separating the substrate into a plurality of spaced pillar structures; doping the pillar structures, such that the silicon-germanium compound layer forms a channel region; and forming a dielectric layer on an outer peripheral surface of each of the pillar structures, and a gate on an outer peripheral surface of the dielectric layer, the gate being opposite to at least a part of the channel region.

Semiconductor structure with silicon-germanium compound and manufacturing method thereof

Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure and a semiconductor structure. The method for fabricating a semiconductor structure provided by the embodiments of the present disclosure includes: providing a substrate including an array region and a peripheral region; forming a first mask layer covering the array region and the peripheral region on the substrate; forming a first device structure pattern on the first mask layer, and then forming a second device structure pattern on the first mask layer; and etching the substrate by using the first device structure pattern and the second device structure pattern as mask layer to form a peripheral region structure and an array region structure synchronously on the substrate. Technological processes are simplified, fabrication difficulties are reduced, and production efficiency is improved.

Method for fabricating semiconductor structure, and semiconductor structure

A method for forming a semiconductor structure includes: providing a semiconductor substrate including a plurality of first semiconductor pillars and bit line isolation trenches arranged at intervals in a first direction; in which the bit line isolation trenches extend in a second direction, the first direction being perpendicular to the second direction; forming a bit line isolation layer in a bit line isolation trench; in which a gap is provided between the bit line isolation layer and the bit line isolation trench, in which the gap is located at a bottom corner of the bit line isolation trench and extends in the second direction, and exposes part of the bottom of the bit line isolation trench; etching a first semiconductor pillar in the first direction through the gap to form a bit line trench; forming a bit line in the bit line trench.

Semiconductor structure including a plurality of semicondcutor pillars and bit line isolation trenches and method for forming same

Embodiments relate to the field of semiconductor manufacturing technology, and more particularly, to a method for fabricating a semiconductor structure and a semiconductor structure. The fabricating method includes: providing a substrate including an array region and a peripheral region; and forming, on the substrate, a first mask layer covering the array region and the peripheral region, the first mask layer having a first device structure pattern directly facing the array region and a second device structure pattern directly facing the peripheral region. Through the method for fabricating a semiconductor structure, the first mask layer having the first device structure pattern and the second device structure pattern is formed on the substrate, and then the substrate is etched by using the first device structure pattern and the second device structure pattern as mask layer to synchronously form a peripheral region structure and an array region structure on the substrate.

Method for fabricating semiconductor structure and semiconductor structure

A semiconductor device includes a substrate. A method includes the following operations. Multiple first trenches extending in a first direction are formed in the substrate. Multiple second trenches extending in a second direction are formed in the substrate in which the first trenches are formed. The first direction is perpendicular to the second direction. A first depth of a first trench is equal to a second depth of a second trench. A first insulating layer, a conducting layer and a second insulating layer are formed in sequence in the first and second trenches. The conducting layer in the first trench is separated on a cross section in the second direction to form two bit lines connected to sidewalls at either side of the first trench and extending in the first direction. Word lines extending in the second direction are formed on the conducting layer in the first and second trenches.

Growing community of inventors

Hefei, China

Minmin Wu