Intel Corporation

Minki Cho

Muhammad M Khellah

Carlos Alfonso Tokunaga

Pascal Meinerzhagen

James W Tschanz

Jaydeep P Kulkarni

Suyoung Bang

Nasser A Kurd

Daniel Nemiroff

Charles Augustine

Praveen Mosalikanti

Turbo Majumder

Stephen Kim

Kah Meng Yeem

Yaxin Shui

Dongmin Yoon

Andrea Bonetti

An integrated circuit (IC) die comprises a sensor, which includes a pulse generator and a pulse expander. The pulse generator comprises gate circuits coupled to each other in an in-series arrangement. An input of the pulse generator is coupled to receive a voltage and the pulse generator is to generate a first signal based on the voltage. The pulse generator is to generate a first pulse of the first signal based on an event wherein radiation from a laser is incident upon the pulse generator. The pulse expander is coupled to receive the first signal from the pulse generator and to generate a second signal based on the first signal, wherein a second pulse of the second signal is based on the first pulse. A first duration of the first pulse is less than a second duration of the second pulse.

Detecting laser-injected faults

An apparatus is provided which comprises: a first device coupled to a first power supply rail; a second device coupled in series with the first device, wherein the second device is coupled to a second power supply rail; and a third device coupled to the first and second power supply rails, wherein the first device is controllable by a first input, wherein the second device is controllable by a second input, wherein the third device is controllable by a third input, and wherein the first input is an analog bias between a high power supply level and a ground supply level.

Reliable digital low dropout voltage regulator

Switched adaptive clocking is provided. A switched adaptive clocking circuit includes a digitally controlled oscillator, a clock generator and a glitch-free multiplexer. The switched adaptive clocking circuit to adaptively switch a source of an output clock from a main clock generated by a clock source to a digitally controlled oscillator clock generated by a digitally controlled oscillator upon detection of a voltage droop, and to quickly switch back to the main clock after recovery from the voltage droop.

Method and apparatus for switched adaptive clocking

An apparatus is provided which comprises: a first power supply rail to provide a first power supply voltage; a second power supply rail to provide a second power supply voltage, wherein the first power supply voltage is higher than the second power supply voltage; a first circuitry coupled to the first and second supply rails, wherein the first circuitry is to operate using the first supply voltage, and wherein the first circuitry is to inject charge on to the second power supply rail in response to a droop indication; and a second circuitry to detect voltage droop on the second power supply rail, wherein the second circuitry is to generate the droop indication for the first circuitry.

Charge injector with integrated level shifter for localized mitigation of supply voltage droop

Embodiments include apparatuses, methods, and systems associated with biasing a sleep transistor (also referred to as a power gate transistor) in an integrated circuit. The sleep transistor may be coupled between a load circuit and a power rail, the sleep transistor to be on in an active mode to provide the supply voltage to the load circuit, and to be off in a sleep mode to disconnect the load circuit from the power rail. The bias circuit may be coupled to the gate terminal of the sleep transistor to provide a calibrated gate voltage to the gate terminal during the sleep mode. The calibrated gate voltage may be based on a subthreshold leakage current and a gate-induced drain leakage (GIDL) current of the sleep transistor or a replica sleep transistor designed to replicate the leakage current of the sleep transistor. Other embodiments may be described and claimed.

Calibrated biasing of sleep transistor in integrated circuits

Embodiments include circuits, apparatuses, and systems for voltage level shifter monitors. In embodiments, a voltage level shifter monitor may include a first signal generator to generate a signal in a first voltage domain, a second signal generator to generate a second signal in a second voltage domain, where the second digital signal corresponds to the first digital signal, a voltage level shifter replica circuit to convert the first digital signal from the first voltage domain to a third digital signal in the second voltage domain, and a comparison circuit to generate a digital error signal based at least in part on the second digital signal and the third digital signal. Other embodiments may be described and claimed.

Voltage level shifter monitor with tunable voltage level shifter replica circuit

An apparatus is described. The apparatus includes a semiconductor chip. The semiconductor chip includes a memory having multiple storage cells. The storage cells are to receive a supply voltage. The semiconductor chip includes supply voltage retention circuitry. The supply voltage retention circuitry is to determine a level of the supply voltage at which the storage cells are able to retain their respective data. The supply voltage retention circuitry is to receive the supply voltage during a stress mode of the supply voltage retention circuitry. The supply voltage retention circuitry is to more weakly retain its stored information than the storage cells during a measurement mode at which the level is determined.

Retention minimum voltage determination techniques

An apparatus is provided which includes: a first power supply node; a second power supply node; a memory bit-cell coupled to the second power supply node; a circuitry coupled to the first and second power supply nodes, the circuitry to operate in a diode-connected mode; and a transistor coupled in parallel to the circuitry, wherein the transistor is controllable by a digital signal such that when the transistor is to turn on, it is to apply voltage and/or current stress to the memory bit-cell.

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Hillsboro, OR, United States of America

Minki Cho