Samsung Electronics Co., Ltd.

Minjoon Kim

Donghoon Han

Jongyong Bae

Seoyoung Maeng

Byounghoon Ji

Kyuho Lee

Sungil Cho

Seungbo Shim

Sungyong Lim

Jinseok Lee

Donghyeon Na

Jiho Uh

Nam Kyun Kim

Jin Young Bang

Hongtaek Lim

Chungho Cho

Tae-sun Shin

Deokjin Kwon

Bongju Lee

A method of fabricating a semiconductor device include; seating a substrate having a substrate radius on an electrostatic chuck, applying first radio-frequency power to the electrostatic chuck to induce plasma in a region at least above the electrostatic chuck, and generating a magnetic field in the region at least above the electrostatic chuck using a magnet having a ring-shape and disposed above the electrostatic chuck by applying second radio-frequency power to the magnet, wherein the magnet has an inner radius ranging from about one-half to about one-fourth of the substrate radius.

Apparatus and method fabricating semiconductor device

A vacuum chuck includes a pedestal including a first surface on which a substrate may be mounted. The first surface of the substrate may include a vacuum hole to provide a vacuum pressure below the substrate, a vacuum groove connected to the vacuum hole, and a gas hole surrounding the vacuum groove to transmit a bottom gas to the substrate. A vacuum pipe may be provided to connect to the vacuum hole, and a gas pipe may be provided to connect to the gas hole. The diameter of the vacuum hole may be about 2 to about 3 micrometers, and a width of the vacuum groove may be about 1.6 to about 2.5 micrometers.

Vacuum chuck, substrate processing apparatus including the same and related method of manufacture

A gas supply for a layer deposition apparatus including a plurality of charge distribution lines connected to a first gas supply source and a plurality of gas filling tanks respectively connected to the charge distribution lines is disclosed. Each of the gas filling tanks may be pressurized with a first gas from the first gas supply source, and a gas supply line connected to a second gas supply source. The apparatus may include a multi-dosing valve assembly connected to outlet portions of the gas filling tanks and configured to supply, sequentially, the first gas from the gas filling tanks to a process chamber. The multi-dosing valve assembly may include a flow path block having a main supply line connected to the process chamber and a backflow prevention valve block fastened to the flow path block and having an opening/closing valve therein.

Gas supply and layer deposition apparatus including the same

Growing community of inventors

Gwangmyeong-si, South Korea

Minjoon Kim