Samsung Electronics Co., Ltd.

Minjong Kim

Jongwon Hong

Jung-soo Yoon

Jang-Hee Lee

Jaebeom Park

Keeyoung Jun

Seonggil Park

Choongrae Cho

Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

Substrate processing apparatus

A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

Plasma-enhanced chemical vapor deposition (PE-CVD) apparatus and method of operating the same

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Hwaseong-si, South Korea

Minjong Kim