Samsung Electronics Co., Ltd.

Minho Jang

Minkyung Kim

Hongki Kim

Minkwan Kim

Insung Joe

Donghyun Kim

In Sung Joe

Seungkuk Kang

Doowon Kwon

Jeongsoon Kang

Taehyoung Kim

Hyunchul Kim

JungChak Ahn

Dongchan Kim

Heegeun Jeong

Masaru Ishii

Beomsuk Lee

Seungjoo Nah

Dong-Chul Lee

Kwansik Cho

Kyungrae Byun

Bokwon Kim

Hyunyoung Yeo

Junghye Kim

Kyoungwon Na

Hyun Young Yeo

Mihye Jang

An image sensor includes a first structure and a second structure stacked on the first structure in a vertical direction, the first structure including first and second pixel pads electrically connected to first and second floating diffusion regions, respectively, and a first coupling suppression line penetrating between the first and second pixel pads, and electrically connected to the first ground structure, and the second structure including third and fourth pixel pads electrically connected to first and second source-follower gates, respectively; and a second coupling suppression line penetrating between the third and fourth pixel pads, and electrically connected to the second ground structure.

Image sensor

An image sensor includes a stack structure including an active pixel region in which a plurality of pixels are defined, and a pad region arranged on at least one side of the active pixel region. The stack structure includes a first substrate including a photoelectric conversion region and a floating diffusion region in each pixel, a first semiconductor substrate, a first front structure on the first semiconductor substrate, and a pad opening penetrating the first semiconductor substrate in the pad region, a second substrate attached to the first substrate and including a pixel gate electrically connected to the floating diffusion region in each pixel, a third substrate attached to the second substrate and including a logic transistor for driving the plurality of pixels, and a pad having a top surface that is exposed through the pad opening.

An image sensor is presented which includes a pixel array including a plurality of image sensing pixels in a substrate, a phase detection shared pixel in the substrate, the phase detection shared pixel including two phase detection subpixels arranged next to each other, a color filter fence disposed on the plurality of image sensing pixels, and the phase detection shared pixel, the color filter fence defining a plurality of color filter spaces, a plurality of color filter layers respectively disposed in the plurality of color filter spaces on the plurality of image sensing pixels, and the phase detection shared pixel, a first micro-lens disposed on each of the plurality of image sensing pixels to have a first height, and a second micro-lens disposed to vertically overlap the two phase detection subpixels of the phase detection shared pixel and to have a second height greater than the first height.

Image sensors including phase detection pixel

An image sensor includes a first structure, a second structure, and a third structure that are sequentially stacked in a vertical direction. The first structure includes a first substrate and at least one first transistor disposed on the first substrate. The second structure includes a second substrate and at least one second transistor disposed on the second substrate. The third structure includes a third substrate that includes an upper surface on which light is incident and a lower surface that is opposite to the upper surface, a photoelectric conversion region disposed in the third substrate, a transfer gate disposed on the lower surface of the third substrate, and a reflective structure disposed on the lower surface of the third substrate and on a lower surface and side surface of the transfer gate.

Image sensor wherein the transfer gate contacts a first refractive layer that is coplanar with a second refractive layer

An image sensor includes a first chip that includes a pixel region and a pad region, and a second chip that is in contact with one surface of the first chip and includes circuits that drive the first chip. The first chip includes a first substrate, an interlayer insulating layer disposed between the first substrate and the second chip, first interconnection lines disposed in the interlayer insulating layer, a conductive pad disposed in the pad region between the second chip and the first interconnection lines, and a recess region formed in the pad region that penetrates the first substrate and the interlayer insulating layer and exposes the conductive pad.

Image sensor with aluminum grid pattern having openings and copper dummy patterns covering the openings

An image sensor includes a first chip including a pixel region, a pad region, and an optical black region interposed between the pixel region and the pad region, and a second chip being in contact with a first surface of the first chip and including circuits for driving the first chip. The first chip includes a first substrate, a device isolation portion disposed in the first substrate and defining unit pixels, an interlayer insulating layer interposed between the first substrate and the second chip, a connection wiring structure disposed in the interlayer insulating layer, and a connection contact plug disposed in the interlayer insulating layer and connecting the connection wiring structure to the device isolation portion in the optical black region. The image sensor further includes a conductive pad disposed in the first chip or the second chip.

An image sensor includes a first structure including a first substrate, and a first internal wiring structure on the first substrate. The first substrate includes an active pixel region and a through electrode region around the active pixel region. The first internal wiring structure includes a plurality of first internal wiring patterns. The image sensor further includes a second structure including a second substrate and a second internal wiring structure on the second substrate. The second substrate is arranged on the first substrate. The image sensor additionally includes a through electrode layer arranged in the through electrode region to at least partially fill a through electrode trench, which penetrates the first substrate, and to connect the first internal wiring structure to the second internal wiring structure.

Image sensor including a back via stack

An image sensor chip includes a lower chip, an upper chip stacked on the lower chip and including a photoelectric element, a via hole penetrating through the upper chip and penetrating through at least a portion of the lower chip, and a conductive connection layer electrically connecting the lower chip and the upper chip to each other in the via hole. The upper chip includes an upper substrate, an upper isolation layer and an upper element on the upper substrate, a connection contact plug, and a multilayer interconnection line electrically connected to the connection contact plug. A distance between an upper surface of the connection contact plug and an upper surface of the upper isolation layer is greater than a distance between an upper surface of an upper gate electrode of the upper element and an upper surface of the upper isolation layer.

Image sensor chip

An image sensor and a method of manufacturing thereof are provided. The image sensor includes a substrate, a grid structure, and color filters. The substrate includes a pixel separation structure defining pixel regions, and a sub-pixel regions for each pixel region. The grid structure is disposed on the substrate and includes first fence segments provided between the sub-pixel regions, and second fence segments provided between neighboring pixel regions. The grid structure defines openings corresponding respectively to the sub-pixel regions. The color filters are disposed in the openings defined by the grid structure. Each of the color filters has a flat top surface and the flat top surface of each color filter is parallel to a bottom surface thereof.

An image sensor includes a substrate having a first surface, a charge storage portion disposed in the substrate, a light-blocking pattern disposed on the first surface overlapping the charge storage portion, and a low-refractive index pattern on the light-blocking pattern.

Growing community of inventors

Suwon-si, South Korea

Minho Jang