Samsung Electronics Co., Ltd.

Minhee Cho

Woobin Song

Hyunmog Park

Kiseok Lee

Sungwon Yoo

Wonsok Lee

Sangkil Lee

Mintae Ryu

Kyunghwan Lee

Yongseok Kim

Sangwoo Lee

Sang Woo Lee

Mirco Cantoro

Junsoo Kim

Hyun Uk Park

Woo Bin Song

Chankyung Kim

Joon Hyuk Kim

Huijung Kim

Minsu Lee

Hei Seung Kim

Sangwuk Park

Dongkyun Park

Beomyong Hwang

Junghwan Oh

Jaehong Min

Han-young Kim

Heiseung Kim

Ho Young Lee

Yongjin Lee

Hyuncheol Kim

Jaeho Hong

Minwoo Song

Ilgweon Kim

Ho Dong Lee

Jaepil Lee

Huije Ryu

Hyunsil Oh

A semiconductor device includes: a conductive line that extends in a first direction on a substrate; an insulating pattern layer on the substrate and having a trench that extends in a second direction, the trench having an extension portion that extends into the conductive line; a channel layer on opposite sidewalls of the trench and connected to a region, exposed by the trench, of the conductive line; first and second gate electrodes on the channel layer, and respectively along the opposite sidewalls of the trench; a gate insulating layer between the channel layer and the first and second gate electrodes; a buried insulating layer between the first and second gate electrodes within the trench; and a first contact and a second contact, respectively buried in the insulating pattern layer, and respectively connected to upper regions of the channel layer.

Semiconductor devices having vertical channel transistor structures and methods of fabricating the same

A semiconductor memory device includes a substrate, a conductive line extending in a first horizontal direction above the substrate, an isolation insulating layer including a channel trench extending in a second horizontal direction intersecting with the first horizontal direction and extending from an upper surface to a lower surface of the isolation insulating layer, above the conductive line, a channel structure disposed above the conductive line, a gate electrode extending in the second horizontal direction, in the channel trench, a capacitor structure above the isolation insulating layer, and a contact structure interposed between the channel structure and the capacitor structure, wherein the channel structure includes an amorphous oxide semiconductor layer disposed in the channel trench above the conductive line, and an upper crystalline oxide semiconductor layer interposed between the amorphous oxide semiconductor layer and the contact structure.

Semiconductor memory device

A transistor structure including an active pattern defined by a first isolation pattern on a substrate, a second isolation pattern at an upper portion of the active pattern, a gate structure extending through the active pattern and the first isolation pattern, at least a lower portion of the gate structure extending through the second isolation pattern, a first oxide semiconductor pattern on a lower surface and a sidewall of the gate structure, the first oxide semiconductor pattern including In-rich IGZO and at least partially contacting the first and second isolation patterns, and source/drain regions at upper portions of the active pattern adjacent to the gate structure may be provided.

Transistor structure including oxide semiconductor pattern surrounding bottom and sidewall of gate and semiconductor device using the same

A semiconductor device including a conductive line on a substrate, a first gate electrode on the conductive line, a second gate electrode separated by a gate isolation insulating layer on the first gate electrode, a first channel layer on a side surface of the first gate electrode, with a first gate insulating layer therebetween, a first source/drain region on another side surface of the first gate electrode, a second channel layer on another side surface of the second gate electrode on a side that is opposite to the first channel layer, with a second gate insulating layer therebetween, a second source/drain region on the second channel layer, and a third source/drain region on the first channel layer and on a side surface of the second gate electrode on a same side as the first channel layer may be provided.

Semiconductor device

A memory device includes a substrate including first and second regions, the first region having first wordlines and first bitlines, and the second region having second wordlines and second bitlines, a first memory cell array including first memory cells in the first region, the first memory cell array having volatility, and each of the first memory cells including a cell switch having a first channel region adjacent to a corresponding first wordline of the first wordlines, and a capacitor connected to the cell switch, and a second memory cell array including second memory cells in the second region, the second memory cell array having non-volatility, and each of the second memory cells including a second channel region adjacent to a corresponding second wordline of the second wordlines, and a ferroelectric layer between the corresponding second wordline of the second wordlines and the second channel region.

Memory device having volatile and non-volatile memory cells

A semiconductor memory device includes: a first word line extending in a vertical direction; a second word line spaced apart from the first word line in a first horizontal direction and extending in the vertical direction; a first semiconductor pattern of a ring-shaped horizontal cross-section surrounding the first word line and constituting a portion of a first cell transistor; a second semiconductor pattern of a ring-shaped horizontal cross-section surrounding the second word line and constituting a portion of a second cell transistor; a cell capacitor between the first semiconductor pattern and the second semiconductor pattern and including a first electrode, a second electrode, and a capacitor dielectric film; a first bit line opposite the cell capacitor with respect to the first semiconductor pattern and extending in a second horizontal direction; and a second bit line opposite the cell capacitor with respect to the second semiconductor pattern.

A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

Method of forming a semiconductor device including an active region with variable atomic concentration of oxide semiconductor material

A memory device is provided. The memory device includes: a substrate; a memory unit provided on the substrate; a channel provided on the memory unit; a word line surrounded by the channel and extending in a first horizontal direction; a gate insulating layer interposed between the channel and the word line; and a bit line contacting an upper end of the channel and extending in a second horizontal direction that crosses the first horizontal direction.

Memory device having a channel provided on a memory unit

A semiconductor device includes: a substrate including an active region and a device isolation region; a flat plate structure formed on the substrate; an oxide semiconductor layer covering a top surface of the flat plate structure and continuously arranged on a top surface of the substrate in the active region and the device isolation region; a gate structure arranged on the oxide semiconductor layer and including a gate dielectric layer and a gate electrode; and a source/drain region arranged on both sides of the gate structure and formed in the oxide semiconductor layer, in which, when viewed from a side cross-section, an extending direction of the flat plate structure and an extending direction of the gate structure cross each other.

Memory device

A semiconductor memory device includes a memory cell array of a three-dimensional structure including a plurality of memory cells repeatedly arranged in a first horizontal direction and a second horizontal direction that are parallel with a main surface of a substrate and cross each other on the substrate and in a vertical direction perpendicular to the main surface, wherein each of the plurality of memory cells includes three transistors. A method of manufacturing a semiconductor memory device includes forming simultaneously a plurality of memory cells arranged in a row in a vertical direction on a substrate, wherein each of the plurality of memory cells includes three transistors.

Semiconductor memory device and method of manufacturing the same

A ferroelectric semiconductor device includes an active region extending in one direction, a gate insulating layer crossing the active region, a ferroelectric layer disposed on the gate insulating layer and including a hafnium oxide, a gate electrode layer disposed on the ferroelectric layer, and source/drain regions disposed on the active region to be adjacent to both sides of the gate insulating layer, wherein the ferroelectric layer includes 20% or more of orthorhombic crystals, and an upper surface of the source/drain region is located at a level equal to or higher than an upper surface of the ferroelectric layer.

Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereof

Semiconductor device including active region with variable atomic concentration of oxide semiconductor material and method of forming the same

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Suwon-si, South Korea

Minhee Cho