Intermolecular, Inc.

Minh-Huu Le

Philip Allan Kraus

Sandeep Nijhawan

Devices are described including a first component and a second component, wherein the first component comprises a Group III-N semiconductor and the second component comprises a bimetallic oxide containing tin, having an index of refraction within 15% of the index of refraction of the Group III-N semiconductor, and having negligible extinction coefficient at wavelengths of light emitted or absorbed by the Group III-N semiconductor. The first component is in optical contact with the second component. Exemplary bimetallic oxides include SnBiOwhere x&#x2245;0.10, ZnSnO, SnAlOwhere x&#x2245;0.18, and SnMgOwhere x&#x2245;0.16. Methods of making and using the devices are also described.

Growing community of inventors

San Jose, CA, United States of America

Minh-Huu Le