Hrl Laboratories, LLC

Minh B Nguyen

Rajesh D Rajavel

Brett Z Nosho

Hasan Sharifi

Sevag Terterian

Terence J DeLyon

Tobias A Schaedler

David H Chow

Florian G Herrault

Shuoqin Wang

Kevin Geary

Mark O'Masta

Kayleigh A Porter

Diego Carrasco

Joseph Nedy

An interposer for a curved detector. In some embodiments a system includes a curved array photodetector; a first readout integrated circuit, the first readout integrated circuit being substantially flat; and an interposer, between the photodetector and the first readout integrated circuit. The photodetector and the first readout integrated circuit may each have a plurality of electrical contacts. The interposer may include a first conductor connecting a first contact, of the plurality of electrical contacts of the photodetector, and a second contact, of the plurality of electrical contacts of the first readout integrated circuit.

Interposer for curved detector

A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Bandabsorber layer on the common ground layer, a barrier layer on the Bandabsorber layer, a Bandabsorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Bandabsorber layer, a removed portion of the barrier layer and a removed portion of the Bandabsorber layer, wherein the ring opening does not extend through the Bandabsorber layer, a first contact on a portion of the Bandabsorber layer inside the ring, and a second contact on a portion of the Bandabsorber layer outside the ring. The Bandabsorber layer and the Bandabsorber layer are n-type, or the Bandabsorber layer and the Bandabsorber layer are p-type.

Simultaneous dual-band image sensors

A hyperspectral imager (HSI) includes a first thin film filter, the first thin film filter including a first quarter wave mirror, a second quarter wave mirror, and a low-refractive-index wedge between the first quarter wave mirror and the second quarter wave mirror. The low-refractive-index wedge has a height dimension such that a distance between the first quarter wave mirror and the second quarter wave mirror increases linearly along a length of the low-refractive-index wedge.

Thin-film filter based hyperspectral imager spanning an octave of long wavelength infrared regime

An infrared detector. The detector includes: a superlattice structure including: at least three first layers; and at least three second layers, alternating with the first layers. Each of the first layers includes, as a major component, InAsP, wherein x is between 0.0% and 99.0%, and each of the second layers includes, as a major component, InAsSb, wherein y is between 0% and 60%.

High quantum efficiency superlattice infrared detector

A simultaneous dual-band image sensor having a plurality of pixels includes a substrate, a common ground on the substrate, wherein each pixel includes a Band 1 absorber layer on the common ground layer, a barrier layer on the Band 1 absorber layer, a Band 2 absorber layer on the barrier layer, a ring opening in the pixel formed by a removed portion of the Band 2 absorber layer, a removed portion of the barrier layer and a removed portion of the Band 1 absorber layer, wherein the ring opening does not extend through the Band 1 absorber layer, a first contact on a portion of the Band 2 absorber layer inside the ring, and a second contact on a portion of the Band 2 absorber layer outside the ring. The Band 1 absorber layer and the Band 2 absorber layer are n-type, or the Band 1 absorber layer and the Band 2 absorber layer are p-type.

A phototransistor includes an emitter, a collector, and a base between the emitter and the collector. The base has a thickness greater than 500 nanometers and the base absorbs photons passing through the collector to the base.

Infrared photodetector with optical amplification and low dark current

Methods of fabrication and monolithic integration of a polycrystalline infrared detector structure deposit Group III-V compound semiconductor materials at a low deposition temperature within a range of about 300&#xb0; C. to about 400&#xb0; C. directly on an amorphous template. The methods provide wafer-level fabrication of polycrystalline infrared detectors and monolithic integration with a readout integrated circuit wafer for focal plane arrays.

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Thousand Oaks, CA, United States of America

Minh B Nguyen