Chint New Energy Technology Co., Ltd.

Guangdong Aiko Solar Energy Technology Co., Ltd.

Zhejiang Aiko Solar Energy Technology Co., Ltd.

Mingzhang Feng

Sheng He

Gang Chen

Jiebin Fang

Kang-Cheng Lin

Wei-Chih Hsu

Jinfang Yang

Some embodiments of the present disclosure provide an N-type TOPCon cell with double-sided aluminum paste electrodes, and a preparation method therefor. The front side of the cell is provided with a front-side silver main grid and a front-side aluminum fine grid, and the back side is provided with a back-side silver main grid and a back-side aluminum fine grid. The method for preparing the cell includes: texturing→B diffusion→BSG removal→alkali polishing→depositing a tunnel oxide layer and a polysilicon layer on a back side of a substrate by means of LPCVD→P diffusion on the back side→PSG removal→plating removal→deposition of an AlOpreparatory layer and a first SiNHpreparatory layer on the front side→deposition of a second preparatory layer SiNHon the back side→UV laser ablation on the front side of the substrate and the back side of the substrate→screen printing.

N-type TOPCon cell with double-sided aluminum paste electrodes, and preparation method for preparing N-type TOPCon cell with double-sided aluminum paste electrodes

Some embodiments of the present invention relate to a technical field of N-type TOPCon solar cells, and disclose a back-side metal electrode of an N-type TOPCon solar cell. The back-side metal electrode includes a substrate, a plurality of first silver fine grids disposed on a passivation film which is on a back side of the substrate, a plurality of second aluminum fine grids overlaid on the plurality of first silver fine grids, and a plurality of first silver main grids disposed perpendicular to the plurality of first silver fine grids. Each of the plurality of first silver main grids is a segmented structure. The back-side metal electrode further includes a plurality of second aluminum main grids, which are formed, in a printing manner, between any two adjacent grid segments of a plurality of grid segments and around each of the plurality of grid segments.

Back-side metal electrode of N-type TOPCon solar cell, and method for preparing back-side metal electrode of N-type TOPCon solar cell, and N-type TOPCon solar cell

Disclosed is a positive electrode of a crystalline silicon solar cell with a break-proof grid function, comprising a positive electrode busbar (), a positive electrode grid (), and a break-proof grid structure (). The break-proof grid structure () and the positive electrode grid () are integrally printed and formed. The break-proof grid structure () is an octagon with a hollow-out groove () provided on its rear side. The break-proof grid structure () includes a rectangular grid segment () located in the middle, and two isosceles trapezoidal grid segments () that are located at both sides of the rectangular grid segment () and are provided symmetrically with the rectangular grid segment () as a center. The rectangular grid segment () spans the positive electrode busbar (), and the left and right ends of the rectangular grid segment () extend out of the positive electrode busbar (). The extended grid segment is a rectangular extensional break-proof grid segment (). Both ends of the isosceles trapezoidal grid segment () respectively are in contact with the extensional break-proof grid segment () and the positive electrode grid (). The hollow-out groove () is located within the isosceles trapezoidal grid segment () or spans the extensional break-proof grid segment () and the isosceles trapezoidal grid segment (). A break-proof grid design in the positive electrode employs the combination of the octagon and the hollow-out groove, and can effectively reduce the probability of grid breakage when the front-side electrode is printed.

Positive electrode of crystalline silicon solar cell having gate rupture prevention function

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Zhejiang, China

Mingzhang Feng